NTE2395

NTE2395 MOSFET N−Ch, Enhancement Mode High Speed Switch TO220 Type Package Features: D Dynamic dv/dt Rating D +175C Operating Temperature D Fast Switching D Ease of Paralleling D Simple Drive Requirements D G S Absolute Maximum Ratings: Continuous Drain Current (VGS = 10V), ID TC = +25C (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A TC = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36A Pulsed Drain Current (Note 2), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200A Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W Derate Linearly Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W/C Gate−to−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Single Pulse Avalanche Energy (Note 3), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mJ Peak Diode Recovery dv/dt (Note 4), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5V/ns Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +175C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +175C Lead Temperature (During Soldering, 1.6mm from case for 10sec), TL . . . . . . . . . . . . . . . . . +300C Mounting Torque (6−32 or M3 Screw) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 lbfin (1.1Nm) Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0C/W Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62C/W Typical Thermal Resistance, Case−to−Sink (Flat, Greased Surface), RthCS . . . . . . . . . . . . 0.5C/W Note Note Note Note 1. 2. 3. 4. Current limited by the package, (Die Current = 51A). Repetitive rating; pulse width limited by maximum junction temperature. VDD = 25V, starting TJ = +25C, L = 44H, RG = 25 , IAS = 51A ISD  51A, di/dt  250A/s, VDD  V(BR)DSS, TJ  +175C Rev. 10−13 Electrical Characteristics: (TJ = +25C unless otherwise specified) Parameter Symbol Test Conditions Drain−to−Source Breakdown Voltage V(BR)DSS Breakdown Voltage Temp. Coefficient  V(BR)DSS Reference to +25C, ID = 1mA  TJ VGS = 0V, ID = 250A Min Typ Max Unit 60 − − V − 0.060 − V/C − − 0.028  Static Drain−to−Source On−Resistance RDS(on) VGS = 10V, ID = 31A, Note 5 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 2.0 − 4.0 V VDS = 25V, ID = 31A, Note 5 15 − − mhos VDS = 60V, VGS = 0V − − 25 A VDS = 48V, VGS = 0V, TJ = +125C − − 250 A Forward Transconductance Drain−to−Source Leakage Current gfs IDSS Gate−to−Source Forward Leakage IGSS VGS = 20V − − 100 nA Gate−to−Source Reverse Leakage IGSS VGS = −20V − − −100 nA ID = 51A, VDS = 48V, VGS = 10V, Note 5 − − 67 nC − − 18 nC − − 25 nC − 14 − ns − 110 − ns td(off) − 45 − ns tf − 92 − ns Between lead, .250in. (6.0) mm from package and center of die contact − 4.5 − nH − 7.5 − nH VGS = 0V, VDS = 25V, f = 1MHz − 1900 − pF Total Gate Charge Qg Gate−to−Source Charge Qgs Gate−to−Drain (“Miller”) Charge Qgd Turn−On Delay Time td(on) Rise Time tr Turn−Off Delay Time Fall Time VDD = 30V, ID = 51A, RG = 9.1 , RD = 0.55 , Note 5 Internal Drain Inductance LD Internal Source Inductance LS Input Capacitance Ciss Output Capacitance Coss − 920 − pF Reverse Transfer Capacitance Crss − 170 − pF Source−Drain Ratings and Characteristics: Parameter Symbol Continuous Source Current (Body Diode) IS Pulsed Source Current (Body Diode) Test Conditions Min Typ Max Unit Note 1 − − 50 A ISM Note 2 − − 200 A Diode Forward Voltage VSD TJ = +25C, IS = 51A, VGS = 0V, Note 5 − − 2.5 V Reverse Recovery Time trr − 120 180 ns Reverse Recovery Charge Qrr TJ = +25C, IF = 51A, di/dt = 100A/s, Note 5 − 0.53 0.80 C Forward Turn−On Time ton Intrinsic turn−on time is neglegible (turn−on is dominated by LS+LD) Note 1. Current limited by the package, (Die Current = 51A). Note 2. Repetitive rating; pulse width limited by maximum junction temperature. Note 5. Pulse width  300s; duty cycle  2%. .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Gate .100 (2.54) Source Drain/Tab