NTE2398

NTE2398 MOSFET N−Ch, Enhancement Mode High Speed Switch TO220 Type Package Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Fast Switching D Ease of Paralleling D Simple Drive Requirements D G S Absolute Maximum Ratings: Continuous Drain Current (VGS = 10V), ID TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5A TC = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.9A Pulsed Drain Current (Note 1), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18A Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74W Derate Linearly Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.59W/C Gate−to−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Single Pulse Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 280mJ Avalanche Current (Note 1), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5A Repetitive Avalanche Energy (Note 1), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.4mJ Peak Diode Recovery dv/dt (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5V/ns Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Lead Temperature (During Soldering, 1.6mm from case for 10sec), TL . . . . . . . . . . . . . . . . . +300C Mounting Torque (6−32 or M3 Screw) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 lbfin (1.1Nm) Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.7C/W Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62C/W Typical Thermal Resistance, Case−to−Sink (Flat, Greased Surface), RthCS . . . . . . . . . . . . 0.5C/W Note 1. Repetitive rating; pulse width limited by maximum junction temperature. Note 2. VDD = 50V, starting TJ = +25C, L = 24mH, RG = 25 , IAS = 4.5A Note 3. ISD  4.5A, di/dt  75A/s, VDD  V(BR)DSS, TJ  +150C Rev. 10−13 Electrical Characteristics: (TJ = +25C unless otherwise specified) Parameter Symbol Test Conditions Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A Breakdown Voltage Temp. Coefficient  V(BR)DSS Reference to +25C, ID = 1mA  TJ Min Typ Max Unit 500 − − V − 0.61 − V/C − − 1.5  Static Drain−to−Source On−Resistance RDS(on) VGS = 10V, ID = 2.7A, Note 4 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 2.0 − 4.0 V VDS = 50V, ID = 2.7A, Note 4 2.5 − − mhos VDS = 500V, VGS = 0V − − 25 A VDS = 400V, VGS = 0V, TJ = +125C − − 250 A Forward Transconductance Drain−to−Source Leakage Current gfs IDSS Gate−to−Source Forward Leakage IGSS VGS = 20V − − 100 nA Gate−to−Source Reverse Leakage IGSS VGS = −20V − − −100 nA ID = 3.1A, VDS = 400V, VGS = 10V, Note 4 − − 38 nC − − 5.0 nC − − 22 nC − 8.2 − ns − 16 − ns td(off) − 42 − ns tf − 16 − ns Between lead, .250in. (6.0) mm from package and center of die contact − 4.5 − nH − 7.5 − nH VGS = 0V, VDS = 25V, f = 1MHz − 610 − pF Total Gate Charge Qg Gate−to−Source Charge Qgs Gate−to−Drain (“Miller”) Charge Qgd Turn−On Delay Time td(on) Rise Time tr Turn−Off Delay Time Fall Time VDD = 250V, ID = 3.1A, RG = 12 , RD = 79 , Note 4 Internal Drain Inductance LD Internal Source Inductance LS Input Capacitance Ciss Output Capacitance Coss − 160 − pF Reverse Transfer Capacitance Crss − 68 − pF Min Typ Max Unit − − 4.5 A Source−Drain Ratings and Characteristics: Parameter Symbol Continuous Source Current (Body Diode) IS Test Conditions Pulsed Source Current (Body Diode) ISM Note 1 − − 18 A Diode Forward Voltage VSD TJ = +25C, IS = 4.5A, VGS = 0V, Note 4 − − 1.6 V Reverse Recovery Time trr − 320 640 ns Reverse Recovery Charge Qrr TJ = +25C, IF = 3.1A, di/dt = 100A/s, Note 4 − 1.0 2.0 C Forward Turn−On Time ton Intrinsic turn−on time is neglegible (turn−on is dominated by LS+LD) Note 1. Repetitive rating; pulse width limited by maximum junction temperature. Note 4. Pulse width  300s; duty cycle  2%. .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Gate .100 (2.54) Source Drain/Tab