NTE2409

NTE2409 Silicon PNP Transistor General Purpose Amp, Surface Mount (Compl to NTE2408) Description: The NTE2409 is a silicon PNP general purpose transistor in a SOT–23 type surface mount package designed for use in driver stages of audio amplifiers in thick and thin–film hybrid circuits. Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector–Emitter Voltage, VCEX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA Peak Emitter Current, IEM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA Peak Base Current, IBM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA Total Power Dissipation (TA = +60°C, Note 1), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 ° to +150°C Thermal Resistance, Junction–to–Tab, RthJT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60K/W Thermal Resistance, Tab–to–Soldering Points, RthTS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 280K/W Thermal Resistance, Soldering Points–to–Ambient (Note 1), RthSA . . . . . . . . . . . . . . . . . . . . 90K/W Note 1. Mounted on a ceramic substrate .314 (8mm) x .393 (10mm) x .027 (0.7mm). Electrical Characteristics: (TJ = +25°C unless otherwise specified) Parameter Collector Cutoff Current Base–Emitter Voltage Collector–Emitter Saturation Voltage Symbol ICBO VBE VCE(sat) Test Conditions Min Typ Max Unit VCB = 30V, IE = 0 – 1 15 nA VCB = 30V, IE = 0, TJ = +150°C – – 4 µA VCE = 5V, IC = 2mA, Note 2 600 650 750 mV VCE = 5V, IC = 10mA, Note 2 – – 820 mV IC = 10mA, IB = 0.5mA, Note 3 – 75 300 mV IC = 100mA, IB = 5mA, Note 3 – 250 650 mV Note 2. VBE decreases by about 2mV/K with increasing temperature. Note 3. VBE(sat) decreases by about 1.7mV with increasing temperature. Electrical Characteristics (Cont’d): (TJ = +25°C unless otherwise specified) Parameter Symbol Base–Emitter Saturation Voltage VBE(sat) DC Current Gain hFE Test Conditions Min Typ Max Unit IC = 10mA, IB = 0.5mA, Note 3 – 700 – mV IC = 100mA, IB = 5mA, Note 3 – 850 – mV 220 – 475 VCE = 5V, IC = 2mA Transition Frequency fT VCE = 5V, IC = 10mA, f = 35MHz – 150 – MHz Collector Capacitance Cc VCB = 10V, IE = Ie = 0, f = 1MHz – 4.5 – pF Small–Signal Current Gain hfe VCE = 5V, IC = 2mA 75 – 900 Noise Figure NF VCE = 5V, IC = 200µA, f = 1kHz, B = 200Hz, RS = 2kΩ – 2 10 Note 3. VBE(sat) decreases by about 1.7mV with increasing temperature. .016 (0.48) C B .098 (2.5) Max E .037 (0.95) .074 (1.9) .118 (3.0) Max .051 (1.3) .043 (1.1) .007 (0.2) dB