NTE241

NTE241 (NPN) & NTE242 (PNP) Silicon Complementary Transistors Audio Power Amplifier, Switch Description: The NTE241 (NPN) and NTE242 (PNP) are silicon complementary transistors in a TO220 type package designed for use in power amplifier and switching circuits. Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 320mW/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Thermal Resistance, Junction–to–Case, RΘJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.12°C/W Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 80 – – V OFF Characteristics Collector–Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current VCEO(sus) IC = 100mA, IB = 0, Note 1 ICEO VCE = 80V, IB = 0 – – 1.0 mA ICEX VCE = 80V, VEB(off) = 1.5V – – 0.1 mA VCE = 80V, VEB(off) = 1.5V, TC = +125°C – – 2.0 mA ICBO VCB = 80V, IE = 0 – – 0.1 mA IEBO VBE = 5V, IC = 0 – – 1.0 mA Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit IC = 1.5A, VCE = 2V 20 – 80 IC = 4.0A, VCE = 2V 7 – – IC = 1.5A, IB = 150mA – – 0.6 V IC = 4.0A, IB = 1A – – 1.4 V IC = 1.5A, VCE = 2V – – 1.2 V ON Characteristics (Note 1) DC Current Gain hFE Collector–Emitter Saturation Voltage Base–Emitter ON Voltage VCE(sat) VBE(on) Dynamic Characteristics Small–Signal Current Gain hfe IC = 100mA, VCE = 2V, f = 1kHz 25 – – Current–Gain Bandwidth Product fT IC = 1A, VCE = 4V, f = 1MHz 2.5 – – Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Base .100 (2.54) Emitter Collector/Tab MHz