NTE2411

NTE2411 Silicon PNP Transistor High Voltage Amp/Driver (Compl to NTE2410) Description: The NTE2411 is a silicon PNP transistor in an SOT–23 type surface mount case designed for use in high voltage applications. Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Total Power Dissipation (TA = +25°C, FR–5 Board, Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . 225mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.8mW/°C Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 556°C/mW Total Power Dissipation (TA = +25°C, Alumina Substrate, Note 2), PD . . . . . . . . . . . . . . . . . 300mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4mW/°C Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 417°C/mW Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Note 1. FR–5 = 1.0 x 0.75 x 0.62 in. Note 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector–Emitter Breakdown Voltage V(BR)CEO IC = 1mA, IB = 0 150 – – V Collector–Base Breakdown Voltage V(BR)CBO IC = 100µA, IE = 0 160 – – V Emitter–Base Breakdown Voltage V(BR)EBO IE = 10µA, IC = 0 5 – – V VCB = 100V, IE = 0 – – 50 nA VCB = 100V, IE = 0, TA = +100°C – – 50 µA Collector Cutoff Current ICBO Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit IC = 1mA, VCE = 5V 50 – – IC = 10mA, VCE = 5V 60 – 240 IC = 50mA, VCE = 5V 50 – – IC = 10mA, IB = 1mA – – 1.0 V IC = 50mA, IB = 5mA – – 1.0 V IC = 10mA, IB = 1mA – – 1.0 V IC = 50mA, IB = 5mA – – 1.0 V 100 – 300 MHz VCB = 10V, IE = 0, f = 1MHz – – 6 pF ON Characteristics DC Current Gain hFE Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage VCE(sat) VBE(sat) Small–Signal Characteristics Current Gain–Bandwidth Product fT Output Capacitance Cobo IC = 10mA, VCE = 10V, f = 100MHz Small Signal Current gain hfe IC = 1mA, VCE = 10V, f = 1kHz 40 – 200 Noise Figure NF IC = 200µA, VCE = 5V, RS = 10Ω, f = 10Hz to 15.7kHz – – 8 .016 (0.48) C B .098 (2.5) Max E .037 (0.95) .074 (1.9) .118 (3.0) Max .051 (1.3) .043 (1.1) .007 (0.2) dB