NTE2429

NTE2428 (NPN) & NTE2429 (PNP) Silicon Complementary Transistors General Purpose Switch Description: The NTE2428 and NTE2429 are silicon complementary transistors in a SOT–89 type surface mount package designed for use in thick and thin film circuits. Typical applications include telephone and general industrial. Absolute Maximum Ratings: Collector–Base Voltage (Open Emitter), VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V Collector–Emitter Voltage, VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter–Base Voltage (Open Collector), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V DC Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A DC Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Total Power Dissipation (TA ≤ +25°C, Note 1), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Thermal Resistance, Junction–to–Ambient (Note 1), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . 125K/W Thermal Resistance, Junction–to–Tab, RthJTAB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10K/W Note 1. Device mounted on a ceramic substrate; area = 2.5cm2, thickness = 0.7mm. Electrical Characteristics: (TJ = +25°C unles otherwise specified) Parameter Min Typ Max Unit VCB = 60V, IE = 0 – – 100 nA VCB = 60V, IE = 0, TJ = +150°C – – 50 µA V(BR)CEO IC = 10mA, IB = 0 80 – – V V(BR)CES IC = 10µA, VBE = 0 90 – – V Emitter–Base Breakdown Voltage V(BR)EBO IE = 10µA, IC = 0 5 – – V Collector–Emitter Saturation Voltage VCE(sat) IC = 150mA, IB = 15mA, Note 2 – – 250 mV IC = 500mA, IB = 50mA, Note 2 – – 500 mV IC = 150mA, IB = 15mA, Note 2 – – 1.0 V IC = 500mA, IB = 50mA, Note 2 – – 1.2 V Collector Cutoff Current Collector–Emitter Breakdown Voltage Base–Emitter Saturation Voltage Symbol ICBO VBE(sat) Test Conditions Note 2. Measured under pulsed conditions. Electrical Characteristics (Cont’d): (TJ = +25°C unles otherwise specified) Parameter DC Current Gain Symbol hFE Test Conditions Min Typ Max VCE = 5V, IC = 100µA, Note 2 30 – – VCE = 5V, IC = 100mA, Note 2 100 – 300 VCE = 5V, IC = 500mA, Note 2 50 – – 100 – – MHz – – 12 pF – – 20 pF – – 90 pF – – 120 pF – – 250 ns – – 500 ns – – 1000 ns – – 650 ns Transition Frequency fT VCE = 10V, IC = 50mA, f = 35MHz Collector Capacitance NTE2428 Cc VCB = 10V, IE = Ie = 0, f = 1MHz NTE2429 Emitter Capacitance NTE2428 Ce VEB = 500mV, IC = Ic = 0, f = 1MHz NTE2429 Turn–On Time NTE2428 ton ICon = 100mA, IBon = –IBoff = 5mA NTE2429 Turn–Off Time NTE2428 toff NTE2429 Note 2. Measured under pulsed conditions. .174 (4.42) .059 (1.5) .067 (1.7) .096 (2.46) .161 (4.1) E .015 (0.32) C .020 (.508) .059 (1.5) .118 (3.0) Bottom View B .041 (1.05) Min Unit