NTE246

NTE245 (NPN) & NTE246 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE245 (NPN) and NTE246 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in general purpose amplifier applications. Features: D High DC Current Gain: hFE = 4000 Typ @ IC = 5A D Monolithic Construction with Built–In Base–Emitter Shunt Resistors Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.857W/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +200°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +200°C Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.17°C/W Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 80 – – V OFF Characteristics Collector–Emitter SustainingVoltage Collector–Emitter Leakage Current Emitter Cutoff Current VCEO(sus) IC = 100mA, IB = 0, Note 1 ICEO VCE = 40V, IB = 0 – – 1.0 mA ICER VEB = 80V, RBE = 1kΩ – – 1.0 mA VEB = 80V, RBE = 1kΩ, TC = +150°C – – 5.0 mA VBE = 5V, IC = 0 – – 2.0 mA IEBO Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2% Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics (Note 1) DC Current Gain Collector–Emitter Saturation Voltage Base–Emitter Voltage hFE VCE = 3V, IC = 5A 1000 – – VCE(sat) IC = 5A, IB = 20mA – – 2.0 V IC = 10A, IB = 50mA – – 4.0 V VCE = 3V, IC = 5A – – 3.0 V VBE Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2% NTE245 C B .135 (3.45) Max .875 (22.2) Dia Max .350 (8.89) Seating Plane E .312 (7.93) Min .040 (1.02) 1.187 (30.16) Emitter NTE246 .665 (16.9) .215 (5.45) C .430 (10.92) .188 (4.8) R Max B Base E .525 (13.35) R Max Collector/Case