NTE247 (NPN) & NTE248 (PNP)
Silicon Complementary Transistors
Darlington Power Amplifier
Description:
The NTE247 (NPN) and NTE248 (PNP) are silicon complementary Darlington transistors in a TO3
type case designed for general−purpose amplifier and low−frequency switching applications.
Features:
D High DC Current Gain: hFE = 3500 Typ @ IC = 5A
D Collector−Emitter Sustaining Voltage: VCEO(sus) = 100V Min @ 100mA
D Monolithic Construction with Built−In Base−Emitter Shunt Resistors
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Emitter−Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W
Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.857W/C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.17C/W
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
100
−
−
V
OFF Characteristics
Collector−Emitter SustainingVoltage
Collector Cutoff Current
Emitter Cutoff Current
VCEO(sus) IC = 100mA, IB = 0, Note 1
ICEO
VCE = 50V, IE = 0
−
−
1.0
mA
ICEX
VCE = 100V, VBE(off) = 1.5V
−
−
0.5
mA
VCE = 100V, VBE(off) = 1.5V, TA = +150C
−
−
5.0
mA
VBE = 5V, IC = 0
−
−
2.0
mA
IEBO
Note 1. Pulse Test: Pulse Width = 300s, Duty Cycle = 2%
Rev. 12−20
Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
VCE = 3V, IC = 6A
750
−
18000
VCE = 3V, IC = 12A
100
−
−
IC = 6A, IB = 24mA
−
−
2.0
V
IC = 12A, IB = 120mA
−
−
3.0
V
ON Characteristics (Note 1)
DC Current Gain
hFE
Collector−Emitter Saturation Voltage
VCE(sat)
Base−Emitter Saturation Voltage
VBE(sat)
IC = 12A, IB = 120mA
−
−
4.0
V
Base−Emitter ON Voltage
VBE(on)
VCE = 3V, IC = 6A
−
−
2.8
V
Dynamic Characteristics
Small−Signal Current Gain
hfe
VCE = 3V, IC = 5A, f = 1kHz
300
−
−
Magnitude of Common Emitter
Small−Signal Short−Circuit
Forward Current Transfer Ratio
|hfe|
VCE = 3V, IC = 5A, f = 1MHz
4.0
−
−
Output Capacitance
NTE247
Cob
−
−
300
−
−
500
VCB = 10V, IE = 0, f = 0.1MHz
NTE248
MHz
pF
pF
Note 1. Pulse Test: Pulse Width = 300s, Duty Cycle = 2%
NTE247
.135 (3.45) Max
C
.875 (22.2)
Dia Max
.350 (8.89)
B
Seating
Plane
E
.312 (7.93) Min
.040 (1.02)
1.187 (30.16)
Emitter
NTE248
.665
(16.9)
.215 (5.45)
C
.430
(10.92)
B
E
.188 (4.8) R Max
Base
.525 (13.35) R Max
Collector/Case
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