NTE249

NTE249 (NPN) & NTE250 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE249 (NPN) and NTE250 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in complementary general purpose amplifier applications. Features: D High DC Current Gain: hFE = 3500 Typ @ IC = 10A D Monolithic Construction with Built–In Base–Emitter Shunt Resistors Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.857W/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +200°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +200°C Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.17°C/W Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 100 – – V OFF Characteristics Collector–Emitter Breakdown Voltage Collector–Emitter Leakage Current Emitter Cutoff Current V(BR)CEO IC = 100mA, IB = 0, Note 1 ICEO VCE = 50V, IE = 0 – – 3.0 mA ICER VCB = 100V, RBE = 1kΩ – – 1.0 mA VCB = 100V, RBE = 1kΩ, TA = +150°C – – 5.0 mA VBE = 5V, IC = 0 – – 5.0 mA IEBO Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2% Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics (Note 1) DC Current Gain Collector–Emitter Saturation Voltage Base–Emitter Voltage hFE VCE = 3V, IC = 10A 1000 – – VCE(sat) IC = 10A, IB = 40mA – – 2.5 V IC = 16A, IB = 80mA – – 4.0 V VCE = 3V, IC = 10A – – 3.0 V VBE Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2% NTE249 C B .135 (3.45) Max .875 (22.2) Dia Max .350 (8.89) Seating Plane E .312 (7.93) Min .040 (1.02) 1.187 (30.16) Emitter NTE250 .665 (16.9) .215 (5.45) C .430 (10.92) .188 (4.8) R Max B Base E .525 (13.35) R Max Collector/Case