NTE25

NTE24 (NPN) & NTE25 (PNP) Silicon Complementary Transistors General Purpose Amplifier, Switch Description: The NTE24 (NPN) and NTE25 (PNP) are complementary silicon transistors in a TO237 type package designed for general purpose medium power amplifier and switching circuits that require collector currents to 1A. Features: D High Collector–Emitter Breakdown Voltage: VCEO = 80V D Exceptional Power Dissipation Capability Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Power Dissipation, PD TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 850mW TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W Junction Temperature, TJ(max) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50°C/W Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 167°C/W Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Collector–Emitter Breakdown Voltage Symbol Test Conditions V(BR)CEO IC = 10mA, IB = 0 Min Typ Max Unit 80 – – V Collector Cutoff Current ICBO VCB = 100V, IE = 0 – – 0.1 µA Emitter Cutoff Current IEBO VEB = 5V, IC = 0 – – 100 nA DC Current Gain hFE VCE = 2V, IC = 50mA 40 – – VCE = 2V, IC = 250mA 40 – – VCE = 2V, IC = 500mA 25 – – Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Collector–Emitter Saturation Voltage Base–Emitter ON Voltage VCE(sat) VBE(on) Current Gain Bandwidth Product fT Output Capacitance Cob Test Conditions Min Typ Max Unit IC = 500mA, IB = 50mA – – 0.5 V IC = 1000mA, IB = 100mA – – 1.5 V VCE = 2V, IC = 1000mA – – 0.5 V VCE = 5V, IC = 200mA, f = 100MHz 50 – – MHz VCB = 10V, IE = 0, f = 1MHz – – 30 pF .200 (5.08) .180 (4.57) .100 (2.54) E C B .180 (4.57) .594 (15.09) .018 (0.46) .015 (0.38) 3.050 (1.27) .050 (1.27) .050 (1.27) .140 (3.55) .090 (2.28) R