NTE253MCP

NTE253 (NPN) & NTE254 (PNP) Silicon Complementary Transistors Darlington Power Amplifier TO−126 Type Package Description: The NTE253 (NPN) and NTE254 (PNP) are silicon complementary Darlington transistors in a TO−126 type case designed for general−purpose amplifier and low−speed switching applications. Features: D High DC Current Gain: hFE = 750 (Min) @ IC = 1.5A D Monolithic Construction with Built−In Base−Emitter Resistors to Limit Leakage Multiplication Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.13C/W Note 1. NTE253MCP is a matched complementary pair containing 1 each of NTE253 (NPN) and NTE254 (PNP). Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit V(BR)CEO IC = 50mA, IB = 0, Note 1 100 − − V OFF Characteristics Collector−Emitter Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ICEO VCE = 100V, IB = 0 − − 0.5 mA ICBO VCE = 100V, IE = 0 − − 0.2 mA VCE = 100V, IE = 0, TC = +100C − − 2.0 mA VBE = 5V, IC = 0 − − 2.0 mA IEBO Rev. 12−20 Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics DC Current Gain hFE VCE = 3V, IC = 1.5A 750 − − Collector−Emitter Saturation Voltage VCE(sat) IC = 1.5A, IB = 30mA − − 2.5 V Base−Emitter ON Voltage VBE(on) VCE = 3V, IC = 1.5A − − 2.5 V NTE253 NTE254 C C B B E E .311 (7.9) Max .150 (3.8) .433 (11.0) Max .126 (3.2) Dia .030 (0.75) .6.2 (15.3) Min E B C .090 (2.3) .110 (2.8) Max