NTE256

NTE256 Silicon NPN Transistor Darlington w/Damper Diode TO−3P Type Package Features: D Very High DC Current Gain D Monolithic Darlington Transistor with Integrated Antiparallel Collector−Emitter Diode D Robust Device Performance and Reliable Operation Applications: D High−Power Fast Switching Applications Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A Collector Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to + 175C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 400 − − V IC = 10A, IB = 400mA − − 1.9 V IC = 20A, IB = 2A − − 3.0 V IC = 10A, IB = 400mA − − 2.5 V ICER VCB = 400V, IE = 0, RBE = 50, TJ = +100C − − 5 mA ICEV VCE = 450V, IB = 0, VBE = 1.5V − − 0.25 mA − − 5.0 mA − − 175 mA 300 − 1800 Collector−Emitter Sustaining Voltage VCEO(sus) IC = 250mA, IB = 0 Collector−Emitter Saturation Voltage VCE(sat) Base−Emitter Saturation Voltage Collector Cutoff Current VBE(sat) Emitter Cutoff Current IEBO VEB = 2V, IC = 0 DC Current Gain hFE IC = 5A, VCE = 5V TJ = +100C Rev. 8−20 C B E .193 (4.9) Max .620 (15.75) Max .795 (20.2) Max B C E .726 (18.45) Min .215 (5.45)