NTE2582

NTE2582 Silicon NPN Transistor High Speed Switching Regulator Features: D High Breakdown Voltage and High Reliability D Fast Switching Speed D Wide ASO Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A Collector Dissipation (TA = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W Collector Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Note 1. Pulse Width ≤ 300µs, Duty Cycle ≤ 10%. Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current ICBO VCB = 400V, IE = 0 – – 10 µA Emitter Cutoff Current IEBO VEB = 5V, IC = 0 – – 10 µA DC Current Gain hFE VCE = 5V, IC = 1.6A 20 – 50 VCE = 5V, IC = 8A 10 – – VCE = 5V, IC = 10mA 10 – – fT VCE = 10V, IC = 1.6A – 20 – MHz Cob VCB = 10V, f = 1MHz – 160 – pF Current Gain–Bandwidth Product Output Capacitance Collector–Emitter Saturation Voltage VCE(sat) IC = 8A, IB = 1.6A – – 0.8 V Base–Emitter Saturation Voltage VBE(sat) IC = 8A, IB = 1.6A – – 1.5 V Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector–Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0 500 – – V Collector–Emitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE = ∞ 400 – – V Emitter–Base Breakdown Voltage V(BR)EBO IE = 1mA, IC = 0 7 – – V Collector–Emitter Sustaining Voltage VCEX(sus) IC = 6A, IB1 = 0.6A, IB2 = –2.4A, L = 500µH, Clamped 400 – – V – – 0.5 µs – – 2.5 µs – – 0.3 µs Turn–On Time ton Storage Time tstg Fall Time IC = 10A, IB1 = 2A, IB2 = –4A, RL = 20Ω, Ω VCC = 200V, Note 2 tf Note 2. Pulse Width = 20µs, Duty Cycle ≤ 1%. .402 (10.2) Max .173 (4.4) Max .224 (5.7) Max .122 (3.1) Dia .114 (2.9) Max .295 (7.5) .165 (4.2) .669 (17.0) Max B C E .531 (13.5) Min .100 (2.54) .059 (1.5) Max NOTE: Tab is isolated