NTE2593

NTE2593 Silicon NPN Transistor High Voltage Amp/Switch TO−220 Full Pack Features: D High Breakdown Voltage: V(BR)CEO = 2100V Min D Low Output Capacitance D Wide ASO Range Absolute Maximum Ratings: (TC = +25C unless otherwise specified) Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2100V Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2100V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA Collector Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit − 1 A 1 A Collector Cutoff Current ICBO VCB = 2100V, IE = 0 − Emitter Cutoff Current IEBO VEB = 4V, IC = 0 − DC Current Gain hFE VCE = 5V, IC = 500A 10 − 60 fT VCE = 10V, IC = 500A − 6 − MHz Collector−Emitter Saturation Voltage VCE(sat) IC = 1mA, IB = 200A − − 5 V Base−Emitter Saturation Voltage VBE(sat) IC = 1A, IB = 200A − − 2 V 2100 − − V 2100 − − V 5 − − V − 1.3 − pF Gain Bandwidth Product Collector−Base Breakdown Voltage V(BR)CBO IC = 10A, IE = 0 Collector−Emitter Breakdown Voltage V(BR)CEO IC = 100A, RBE =  Emitter−Base Breakdown Voltage Output Capacitance V(BR)EBO IE = 10A, IC = 0 Cob VCB = 100V, f = 1MHz Rev. 6−15 .402 (10.2) Max .173 (4.4) Max .224 (5.7) Max .122 (3.1) Dia .114 (2.9) Max .295 (7.5) .165 (4.2) .669 (17.0) Max B C E .531 (13.5) Min .100 (2.54) .059 (1.5) Max NOTE: Tab is isolated