NTE264

NTE263 (NPN) & NTE264 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE263 (NPN) and NTE264 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low–speed switching applications. Features: D High DC Current Gain: = 2500 Typ (NTE263) hFE = 3500 Typ (NTE264) D Collector–Emitter Sustaining Voltage: VCEO(sus) = 100V Min D Low Collector–Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 5A D Monolithic Construction with Built–In Base–Emitter Shunt Resistor Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.52W/°C Total Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.016W/°C Operating Junction Temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Storage Temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.92°C/W Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5°C/W Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 100 – – V OFF Characteristics Collector–Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current VCEO(sus) IC = 200mA, IB = 0, Note 1 ICEO VCE = 100V, IB = 0 – – 1.0 mA ICEX VCE = 100V, VEB(off) = 1.5V – – 300 µA VCE = 100V, VEB(off) = 1.5V, TC = +125°C – – 3 mA IEBO VBE = 5V, IC = 0 – – 5 mA hFE IC = 5A, VCE = 3V 1000 – 20000 IC = 10A, VCE = 3V 100 – – IC = 5A, IB = 0.01A – – 2 V IC = 10A, IB = 0.1A – – 3 V IC = 3A, VCE = 3V – – 2.8 V IC = 10A, VCE = 3V – – 4.5 V ON Characteristics (Note 1) DC Current Gain Collector–Emitter Saturation Voltage Base–Emitter ON Voltage VCE(sat) VBE(on) Dynamic Characteristics Small–Signal Current Gain |hfe| IC = 1A, VCE = 5V, ftest = 1MHz 20 – – Output Capacitance Cob VCB = 10V, IE = 0, f = 1MHz – – 200 Small–Signal Current Gain hfe IC = 1A, VCE = 5V, f = 1kHz 1000 – – Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. NTE263 .420 (10.67) Max C .110 (2.79) B E .147 (3.75) Dia Max .500 (12.7) Min .250 (6.35) Max NTE264 C .500 (12.7) Max .070 (1.78) Max B Base .100 (2.54) E Emitter Collector/Tab pF