NTE2640

NTE2640 Silicon NPN Transistor Color TV Horizontal Deflection Output TO−220 Full Pack Features: D High Speed D High Collector−Emitter Breakdown Voltage D High Reliability D On−Chip Damper Diode Absolute Maximum Ratings: (TA + 25C unless otherwise specified) Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Collector Dissipation, PC TA + 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W TC + 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Electrical Characteristics: (TA + 25C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current Collector−Emitter Sustaining Voltage Symbol Test Conditions Min Typ Max Unit ICBO VCE = 800V, IE = 0 − − 10 A ICES VCE = 1500V, RBE = 0 − − 1.0 mA IEBO VEB = 4V, IC = 0 40 − − mA 800 − − V VCEO(sus) IC = 100mA, IB = 0 Collector−Emitter Saturation Voltage VCE(sat) IC = 3.15A, IB = 630mA − − 3.0 V Base−Emitter Saturation Voltage VBE(sat) IC = 3.15A, IB = 630mA − − 1.5 V hFE VCE = 5V, IC = 500mA 10 − − VCE = 5V, IC = 3.5A 5 − 8 IEC = 6A − − 2 V VCC = 200V, VBE = −2V, IC = 2A, IB1 = 400mA, IB2 = 800mA, Pulse Width = 20s, Duty Cycle  1% − − 0.3 s DC Current Gain Diode Forward Voltage Fall Time VF tf Rev. 6−15 .177 (4.5) .394 (10.0) .138 (3.5) .110 (2.8) Isol .283 (7.2) .630 (16.0) .634 (16.1) B C E .142 (3.6) .024 (0.6) .551 (14.0) .100 (2.54)