NTE2662

NTE2662 Silicon NPN Transistor High Frequency, Low Noise RF Description: The NTE2662 is a silicon NPN type transistor in a miniature surface mount package designed for oscillator applications up to 3GHz. This device features low voltage operation, low phase noise, and high immunity to pushing effects. Features: D New Miniature Surface Mount Package − Small Transistor Footprint − 1.0mm x 0.5mm x 0.5mm − Low Profile / 0.50mm Package Height − Flat Lead Style for Better RF Performance D Ideal for ≤ 3GHz Oscillators D Low Phase Noise D Low Pushing Factor Absolute Maximum Ratings: (TA = +25°C, Note 1 unless otherwise specified) Collector−to−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9V Collector−to−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.5V Emitter−to−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Total Power Dissipation (Note 2), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140mW Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +150°C Note 1. Operation in excess of any one of these parameters may result in permanent damage. Note 2. With device mounted on 1.8cm2 x 1.0mm glass epoxy board. Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Gain Bandwidth Insertion Power Gain Symbol fT |S21E| Test Conditions VCE = 1V, f = 2GHz VCE = 1V, f = 2GHz, Note 3 IC = 5mA IC = 15mA IC = 5mA IC = 15mA Min 3.0 5.0 3.0 4.5 Typ 4.5 6.5 4.0 5.5 Max − − − − Unit GHz GHz dB dB Note 3. Pulsed measurement, Pulse Width ≤ 350μs, Duty Cycle ≤ 2%. Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Noise Figure Reverse Transfer Capacitance Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol NF CRE ICBO IEBO hFE Test Conditions VCE = 1V, IC = 10mA, f = 2GHz VCB = 0.5V, IE = 0mA, f = MHz, Note 4 VCB = 5V, IE = 0 VEB = 1, IC = 0 VCE = 1V, IC = 5mA, Note 3 Min − − − − 100 Typ 1.9 0.6 − − 120 Max 2.5 0.8 600 600 145 Unit dB pF nA nA Note 3. Pulsed measurement, Pulse Width ≤ 350μs, Duty Cycle ≤ 2%. Note 4. Collector−to−Base capacitance when the emitter is grounded. .004 (0.10) .008 (0.20) .005 (0.125) C .004 (0.10) B E .020 (0.50) .027 (0.70) .006 (0.15) .027 (0.70) .039 (1.0) .006 (0.15) .020 (0.50) .008 (0.20) .012 (0.30) .008 (0.20) .014 (0.35) (Bottom View) .014 (0.35)