NTE2668

NTE2668 Silicon NPN Transistor High Current Switching Features: D Adoption of FBET, MBIT process D Large Current Capacitance D Low Collector-To-Emitter Saturation Voltage D High Speed Switching D High Allowable Power Dissipation Applications: D DC-DC Converter D Relay Drivers D Lamp Drivers D Motor Drivers D Strobes Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Collector Power Dissipation, PC TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15W Operating Junction Temprature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Symbol ICBO IEBO h FE f T Test Conditions VCB = 40V, IE = 0 VEB = 4V, IC = 0 VCE = 2V, IC = 500mA VCE = 10V, IC = 500mA VCB = 10V, f = 1MHz IC = 3.5A, IB = 175mA IC = 2A , IB = 40mA Min 200 80 80 50 6 - Typ 330 28 160 110 0.83 30 420 25 Max Unit 0.1 0.1 560 240 170 1.2 MHz pF mV mV V V V V V ns ns ns μA μA Cob VCE Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time VBE VCBO VCES VCEO VEBO ton tstg tf IC = 2A , IB = 40mA IC = 10μA, IE = 0 IC = 100μA, RBE = ∞ IC = 1mA, RBE = ∞ IC = 10μA, IC = 0 Pulse Width = 20μs, Duty Cycle ≤ 1%, 20IB1 = -20IB2 = IC = 2.5A, VCC = 25V .256 (6.5) .197 (5.0) .059 (1.5) C .090 (2.3) .002 (0.5) .275 (7.0) B C E .295 (7.5) .002(0.5) .090 (2.3)