NTE2684

NTE2684 Silicon NPN Transistor High Current Switch TO126 Type Package Absolute Maximum Ratings: (TA = +255C unless otherwise specified) Collector−Base Voltage (Open Emitter), VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Collector−Emitter Voltage (Open Base), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V Emitter−Base Voltage (Open Collector), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V DC Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Peak Collector Current, ICM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Peak Base Current, IBM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Total Power Dissipation (TC 3 +755C), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +1505C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −655 to +1505C Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100K/W Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5K/W Electrical Characteristic: (TJ = +255C unless otherwise specified) Parameter Collector−Emitter Saturation Voltage Base−Emitter Saturation Voltage Collector Cutoff Current Symbol VCE(sat) VBE(sat) ICBO Test Conditions Min Typ Max Unit IC = 5A, IB = 0.5A − − 0.9 V IC = 7A, IB = 0.7A − − 1.2 V IC = 5A, IB = 0.5A − − 1.7 V IC = 7A, IB = 0.7A − − 2.0 V VCB = 100V, IE = 0 − − 0.1 3A − − 10 3A 3A TJ = +1005C Emitter Cutoff Current IEBO VEB = 5V, IC = 0 − − 0.1 DC Current Gain hFE IC = 0.5A, VCE = 10V 45 − 450 Collector Capacitance CC IE = 0, VCB = 10V, f = 1MHz − 40 − pF Transition Frequency fT IC = 0.5A, VCE = 5V, f = 100MHz − 100 − MHz Turn−On Time ton ICon = 1A, IBon = −IBoff = 0.1A − 60 100 ns ICon = 2A, IBon = −IBoff = 0.2A − − 80 ns ICon = 5A, IBon = −IBoff = 0.5A − 180 300 ns ICon = 1A, IBon = −IBoff = 0.1A − 600 800 ns ICon = 2A, IBon = −IBoff = 0.2A − 450 700 ns ICon = 5A, IBon = −IBoff = 0.5A − 350 500 ns Turn−Off Time toff .335 (8.5) Max .150 (3.8) .472 (12.0) Max E .512 (13.0) Min C .126 (3.2) Dia B .030 (0.75) .090 (2.3) .110 (2.8) Max