NTE2695

NTE2695 Silicon PNP Transistor Low Power Audio Amp TO−126 Type Package Description: The NTE2695 is a silicon PNP transistor in a TO−126 type package designed for low power audio amplifier and low−current, high−speed switching applications. Features: D High Collector−Emitter Sustaining Voltage D High DC Current Gain at IC = 200mA D Low Collector−Emitter Saturation Voltage D High Current Gain Bandwidth Product D Annular Construction for Low Leakage Absolute Maximum Ratings: (Note 1) Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15W Derate above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120mW/C Total Power Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W Derate above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.34C/W Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.4C/W Note 1. Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. Electrical Characteristics: (TC = +25C unless otherwise specified)) Parameter Symbol Test Conditions Min Typ Max Unit 100 − − V − − 0.1 A − − 0.1 A − − 0.1 A IC = 200mA 40 − 180 IC = 1A 15 − − IC = 500mA, IB = 50mA − − 0.3 V IC = 1A, IB = 100mA − 0.6 V OFF Characteristics Collector−Emitter Sustaining Voltage Collector Cutoff Current VCEO(sus) IC = 10mA, IB = 0 ICBO VCB = 100V, IE = 0 TC +125C Emitter Cutoff Current IEBO VBE = 7V, IC = 0 hFE VCE = 1V ON Characteristics DC Current Gain Collector−Emitter Saturation Voltage VCE(sat) Base−Emitter Saturation Voltage VBE(sat) IC = 2A, IB = 200mA − − 1.8 V Base−Emitter ON Voltage VBE(on) IC = 500mA, VCE = 1V − − 1.5 V IC = 100mA, VCE = 10V, ftest = 10MHz 40 − − MHz VCB 10V, IE = 0, f = 0.1MHz − − 50 pF Dynamic Characteristics Current−Gain−Bandwidth Product Output Capacitance fT Cob .330 (8.38) Max .175 (4.45) Max .450 (11.4) Max .118 (3.0) Dia .655 (16.6) Max .030 (.762) Dia E C B .090 (2.28) .130 (3.3) Max