NTE2697

NTE2697 Silicon NPN Transistor General Purpose TO−220 Type Package Features: D Low Collector Saturation Voltage: VCE(sat) = 0.5V Max @ IC = 3A D Collector−Emitter Breakdown Voltage: V(BR)CEO = 120V Min D Good Linearity of hFE Applications: D Humidifier D DC/DC Converter D General Purpose Power Amplifiers Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14A Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A Collector Power Dissipation (TC = +25C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Collector−Emitter Breakdown Voltage Symbol Test Conditions V(BR)CEO IC = 50mA, IB = 0 Min Typ Max Unit 120 − − V Collector−Emitter Saturation Voltage VCE(sat) IC = 3A, IB = 300mA − − 0.5 V Base−Emitter Saturation Voltage VBE(sat) IC = 3A, IB = 300mA − − 1.2 V Collector Cut−Off Current ICBO VCB = 200V, IE = 0 − − 100 mA Emitter Cut−Off Current IEBO VEB = 8V, IC = 0 − − 100 mA DC Current Gain hFE IC = 3A, VCE = 4V 100 − 200 .402 (10.2) Max Tab .053 (1.35) Max .626 (15.9) Max .504 (12.8) Min .035 (0.9) Max Base .100 (2.54) Emitter Collector .177 (4.5) Max