NTE272

NTE272 (NPN) & NTE273 (PNP) Silicon Darlington Complementary Power Amplifiers Description: The NTE272 (NPN) and NTE273 (PNP) are silicon complementary Power Amplifiers in a TO202 type case designed for use in complementary amplifiers and driver applications. Features: D High DC Current Gain: hFE = 25,000 (Min) @ IC = 200mA = 15,000 (Min) @ IC = 500mA D Collector−Emitter Breakdown Voltage: V(BR)CES = 40V @ IC = 500mA D Low Collector−Emitter Saturation Voltage: VCE(sat) = 1.5V @ IC = 1A D Monolithic Construction for High Reliability Absolute Maximum Ratings: Collector−Emitter Voltage (Note 2), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Collector−Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Emitter−Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Total Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8mW/°C Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80mW/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150°C Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125°C/W Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.5°C/W Note 1. NTE273 is a discontinued device and no longer available. Note 2. Due to the monolithic construction of this device, breakdown voltages of both transistor elements are identical. V(BR)CES is tested in lieu of V(BR)CEO in order to avoid errors caused by noise pickup. The voltage measured during the V(BR)CES test is the V(BR)CEO of the output transistor. Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector−Emitter Breakdown Voltage V(BR)CES IC = 100µA, VBE = 0 40 − − V Collector−Base Breakdown Voltage V(BR)CBO IC = 100µA, IE = 0 50 − − V Emitter−Base Breakdown Voltage V(BR)EBO IE = 10µA, IC = 0 12 − − V Collector Cutoff Current ICBO VCB = 30V, IE = 0 − − 100 nA Emitter Cutoff Current IEBO VEB = 10V, IC = 0 − − 100 nA |hfe| IC = 200mA, VCE = 5V 25,000 65,000 150,000 IC = 500mA, VCE = 5V 15,000 35,000 − IC = 1A, VCE = 5V 4,000 12,000 − ON Characteristics (Note 3) DC Current Gain Collector−Emitter Saturation Voltage VCE(sat) IC = 1A, IB = 2mA − 1.2 1.5 V Base−Emitter Saturation Voltage VBE(sat) IC = 1A, IB = 2mA − 1.85 2.0 V Base−Emitter ON Voltage VBE(ON) IC = 1A, VCE = 5V − 1.7 2.0 V 1.0 3.2 − − 2.5 6.0 Dynamic Characteristics Small−Signal Current Gain hFE IC = 200mA, VCE = 5V, f = 100MHz, Note 2 Collector−Base Capacitance Ccb VCB = 10V, IE = 0, f = 1MHz Note 3. Pulse test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%. NTE272 Schematic C .380 (9.65) Max .050 (1.27) B .160 (4.06) E .280 (7.25) Max .128 (3.28) Dia .218 (5.55) NTE273 Schematic C B .218 (5.55) E Uniwatt darlington transistors can be used in any number of low power applications, such as relay drivers, motor control and as general purpose amplifiers. As an audio amplifier these devices, when used as a complementary pair, can drive 3.5 watts into a 3.2ohm speaker using a 14 volt supply with less than one per cent distortion. Because of the high gain the base drive requirement is as low as 1mA in this application. They are also useful as power drivers for high current application such as voltage regulators. .995 (25.3) E B C .475 (12.0) Min .100 (2.54) .200 (5.08) Collector Connected to Tab TO202N pF