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NTE28

NTE28

  • 厂商:

    NTE

  • 封装:

  • 描述:

    NTE28 - Germanium PNP Transistor High Current, High Gain Amplifier - NTE Electronics

  • 数据手册
  • 价格&库存
NTE28 数据手册
NTE28 Germanium PNP Transistor High Current, High Gain Amplifier Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V Collector−Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Emitter−Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Collector Current−Continuous, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60A Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 170W Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0W/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +110°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +110°C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5°C/W Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter OFF Characteristics Collector−Emitter Breakdown Voltage Floating Potential Collector Cutoff Current V(BR)CEO IC = 1A, IB = 0, Note 1 V(BR)CES IC = 300mA, VBE = 0 VEBF ICEX ICBO Emitter Cutoff Current ON Characteristics (Note 1) DC Current Gain Collector−Emitter Saturation Voltage Base−Emitter Saturation Voltage Small−Signal Characteristics Common−Emitter Cutoff Frequency fαe IC = 15A, VCE = 2V 2 − − kHz hFE VCE(sat) VBE(sat) IC = 15A, VCE = 2V IC = 60A, VCE = 2V IC = 15A, IB = 1A IC = 60A, IB = 6A IC = 15A, IB = 1A IC = 60A, IB = 6A 60 15 − − − − − − − − − − 180 − 0.15 0.3 0.6 1.0 V V V V IEBO VCB = 60V, IE = 0 VCE = 45V, VBE(off) = 2V, TC = +71°C VCB = 2V, IE = 0 VCB = 60V, IE = 0 VBE = 30V, IC = 0 VBE = 30V, IC = 0, TC = +71°C 45 60 − − − − − − − − − − − − − − − − 0.5 15 0.2 4.0 4.0 15 V V V mA mA mA mA mA Symbol Test Conditions Min Typ Max Unit Note 1. To avoid excessive heating of the collector junction, perform test with pulse method. 1.250 (31.75 Dia Max 1.005 (25.55) Dia Max .500 (12.7) Max .500 (12.7) Max .710 (18.03) Max .312 (7.93) 10−32 UNF−2A Emitter .355 (9.04) Max Base Collector/Case
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