NTE2920

NTE2920 MOSFET N−Ch, Enhancement Mode High Speed Switch TO3P Type Package Features: D Drain Current: ID = 70A at TC = +25C D Drain Source Voltage: VDSS = 60V Min D Static Drain−Source On−Resistance: RDS(on) = 0.014 Max D Fast Switching D G S Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Drain−Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Continuous Gate−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Continuous Drain Current, ID TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70A TC = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64A Single Pulse Drain Current, IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360A Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 230W Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +175C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +175C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.65C/W Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Drain−Source Breakdown Voltage Symbol V(BR)DSS Test Conditions Min Typ Max Unit VGS = 0V, ID = 250A 60 − − V 2.0 − 4.0 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A Drain−Source On−Resistance RDS(on) VGS = 10V, ID = 54A − − 0.014  Gate−Source Body Leakage Current IGSS VGS = 20V, VDS = 0V − − 100 nA Zero Gate Voltage Drain Current IDSS VDS = 60V, VGS = 0V − − 25 A Forward ON−Voltage VSD IS = 90A, VGS = 0V − − 2.5 V Forward Transconductance gfs VDS = 25V, ID = 54A 25 − − S Rev. 11−15 Electrical Characteristics (Cont’d): (TC = +25C unless otherwise specified) Parameter Symbol Min Typ Max Unit − − 160 nC − − 48 nC − − 54 nC − 20 − ns − 160 − ns td(off) − 83 − ns tf − 150 − ns Between lead, .250in. (6.0) mm from package and center of die contact − 5.0 − nH − 13 − nH VGS = 0V, VDS = 25V, f = 1MHz − 4500 − pF Total Gate Charge Qg Gate−to−Source Charge Qgs Gate−to−Drain (“Miller”) Charge Qgd Turn−On Delay Time td(on) Rise Time tr Turn−Off Delay Time Fall Time Test Conditions ID = 64A, VDS = 48V, VGS = 10V, Note 1 VDD = 30V, ID = 64A, RG = 6.2, RD = 0.45, Note 1 Internal Drain Inductance LD Internal Source Inductance LS Input Capacitance Ciss Output Capacitance Coss − 2000 − pF Reverse Transfer Capacitance Crss − 300 − pF Min Typ Max Unit Source−Drain Ratings and Characteristics: Parameter Symbol Test Conditions Continuous Source Current (Body Diode) IS Note 2 − − 70 A Pulsed Source Current (Body Diode) ISM Note 1 − − 360 A Diode Forward Voltage VSD TJ = +25C, IS = 90A, VGS = 0V, Note 3 − − 2.5 V Reverse Recovery Time trr − 270 540 ns Reverse Recovery Charge Qrr TJ = +25C, IF = 64A, di/dt = 100A/s, Note 1 − 1.1 2.2 C Forward Turn−On Time ton Intrinsic turn−on time is neglegible (turn−on is dominated by LS+LD) Note 1. Pulse width  300s; duty cycle  2%. Note 2. Current limited by the package, (Die Current = 90A). Note 3. Repetitive rating; pulse width limited by maximum junction temperature. .190 (4.82) .615 (15.62) .787 (20.0) .591 (15.02) .126 (3.22) Dia .787 (20.0) G D S .215 (5.47)