NTE2932

NTE2932 MOSFET N−Channel, Enhancement Mode High Speed Switch TO3PML Type Package Features: D Avalanche Rugged Technology D Rugged Gate Oxide Technology D Lower Input Capacitance D Improved Gate Charge D Extended Safe Operating Area D Lower RDS(on): 0.0713 Typ D Lower Leakage Current: 105 A (Max) @ VDS = 200V D G S Absolute Maximum Ratings: Drain−to−Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Drain Current, ID Continuous TC = +255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21.3A TC = +1005C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.5A Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130A Total Power Dissipation (TC = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90W Derate Above 255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.72W/5C Gate−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +30V Single Pulsed Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 605mJ Avalanche Current (Note 1), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21.3A Repetitive Avalanche Energy (Note 1), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9mJ Peak Diode Recovery dv/dt (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0V/ns Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), TL . . . . . . . . . . . . . . +3005C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.385C/W Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 405C/W Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 2. L = 2mH, IAS = 21.3A, VDD = 50V, RG = 273 , Starting TJ = +255C. Rev. 10−13 Note 3. ISD 3 32A, di/dt 3 320A/5 s, VDD 3 V(BR)DSS, Starting TJ = +255C. Electrical Characteristics: (TC = +255C unless otherwise specified) Parameter Drain−Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Gate Threshold Voltage Symbol BVDSS Test Conditions VGS = 0V, ID = 2505 A +V(BR)DSS/ ID = 2505 A +TJ VGS(th) VDS = 5V, ID = 2505 A Min Typ Max Unit 200 − − V − 0.24 − V/5C 2.0 − 4.0 V Gate−Source Leakage Forward IGSS VGS = 30V − − 100 nA Gate−Source Leakage Reverse IGSS VGS = −30V − − −100 nA Drain−to−Source Leakage Current IDSS VDS = 200V − − 10 5A VDS = 160V, TC = +1505C − − 100 5A RDS(on) VGS = 10V, ID = 10.65A, Note 4 − − 0.085 3 Forward Transconductance gfs VDS = 40V, ID = 10.65A, Note 4 − 16.64 − mhos Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1MHz − 2300 3000 pF Output Capacitance Coss − 410 475 pF Reverse Transfer Capacitance Crss − 200 230 pF Turn−On Delay Time td(on) − 21 50 ns − 20 50 ns td(off) − 77 160 ns tf − 38 90 ns − 95 123 nC − 18 − nC − 45.3 − nC (Body Diode) − − 21.3 A Static Drain−Source ON Resistance Rise Time Turn−Off Delay Time Fall Time tr Total Gate Charge Qg Gate−Source Charge Qgs Gate−Drain (“Miller”) Charge Qgd VDD = 100V, ID = 32A, RG = 6.23 , Note 4, Note 5 VGS = 10V, ID = 32A, VDS = 160V, Note 4, Note 5 Source−Drain Diode Ratings and Characteristics Continuous Source Current IS Pulse Source Current ISM (Body Diode) Note 1 − − 130 A Diode Forward Voltage VSD TJ = +255C, IS = 21.3A, VGS = 0V, Note 4 − − 1.5 V Reverse Recovery Time trr − 203 − ns Reverse Recovery Charge Qrr TJ = +255C, IF = 32A, diF/dt = 100A/5 s, Note 4 − 1.52 − 5C Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 4. Pulse Test: Pulse Width = 2505 s, Duty Cycle 3 2%. Note 5. Essentially independent of operating temperature. .221 (5.6) .134 (3.4) Dia .123 (3.1) .630 (16.0) .315 (8.0) .866 (22.0) G D S .158 (4.0) .804 (20.4) .215 (5.45) .040 (1.0)