NTE2933
MOSFET
N−Channel, Enhancement Mode
High Speed Switch
TO3PML Type Package
Features:
D Avalanche Rugged Technology
D Rugged Gate Oxide Technology
D Lower Input Capacitance
D Improved Gate Charge
D Extended Safe Operating Area
D Lower RDS(on): 0.4373 Typ
D Lower Leakage Current: 105 A (Max) @ VDS = 400V
D
G
S
Absolute Maximum Ratings:
Drain−to−Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Drain Current, ID
Continuous
TC = +255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
TC = +1005C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.1A
Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44A
Total Power Dissipation (TC = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85W
Derate Above 255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W/5C
Gate−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +30V
Single Pulsed Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 549mJ
Avalanche Current (Note 1), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Repetitive Avalanche Energy (Note 1), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.5mJ
Peak Diode Recovery dv/dt (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0V/ns
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C
Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), TL . . . . . . . . . . . . . . +3005C
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.465C/W
Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 405C/W
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 2. L = 15mH, IAS = 8A, VDD = 50V, RG = 273 , Starting TJ = +255C.
Rev. 10−13
Note 3. ISD 3 10A, di/dt 3 170A/5 s, VDD 3 V(BR)DSS, Starting TJ = +255C.
Electrical Characteristics: (TC = +255C unless otherwise specified)
Parameter
Drain−Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Gate Threshold Voltage
Symbol
BVDSS
Test Conditions
VGS = 0V, ID = 2505 A
+V(BR)DSS/ ID = 2505 A
+TJ
VGS(th)
VDS = 5V, ID = 2505 A
Min
Typ
Max
Unit
400
−
−
V
−
0.50
−
V/5C
2.0
−
4.0
V
Gate−Source Leakage Forward
IGSS
VGS = 30V
−
−
100
nA
Gate−Source Leakage Reverse
IGSS
VGS = −30V
−
−
−100
nA
Drain−to−Source Leakage Current
IDSS
VDS = 400V
−
−
10
5A
VDS = 320V, TC = +1505C
−
−
100
5A
RDS(on)
VGS = 10V, ID = 4A, Note 4
−
−
0.55
3
Forward Transconductance
gfs
VDS = 50V, ID = 4A, Note 4
−
7.05
−
mhos
Input Capacitance
Ciss
VGS = 0V, VDS = 25V, f = 1MHz
−
1180
1530
pF
Output Capacitance
Coss
−
175
205
pF
Reverse Transfer Capacitance
Crss
−
80
95
pF
Turn−On Delay Time
td(on)
−
18
50
ns
−
21
55
ns
td(off)
−
78
170
ns
tf
−
28
65
ns
−
58
75
nC
−
8.1
−
nC
−
31.3
−
nC
(Body Diode)
−
−
8
A
Static Drain−Source ON Resistance
Rise Time
Turn−Off Delay Time
Fall Time
tr
Total Gate Charge
Qg
Gate−Source Charge
Qgs
Gate−Drain (“Miller”) Charge
Qgd
VDD = 200V, ID = 10A, RG = 9.13 ,
Note 4, Note 5
VGS = 10V, ID = 10A, VDS = 320V,
Note 4, Note 5
Source−Drain Diode Ratings and Characteristics
Continuous Source Current
IS
Pulse Source Current
ISM
(Body Diode) Note 1
−
−
44
A
Diode Forward Voltage
VSD
TJ = +255C, IS = 8A, VGS = 0V, Note 4
−
−
1.5
V
Reverse Recovery Time
trr
−
315
−
ns
Reverse Recovery Charge
Qrr
TJ = +255C, IF = 10A, diF/dt = 100A/5 s,
Note 4
−
2.84
−
5C
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 4. Pulse Test: Pulse Width = 2505 s, Duty Cycle 3 2%.
Note 5. Essentially independent of operating temperature.
.221 (5.6)
.134 (3.4) Dia
.123 (3.1)
.630 (16.0)
.315
(8.0)
.866
(22.0)
G
D
S
.158 (4.0)
.804
(20.4)
.215 (5.45)
.040 (1.0)
