NTE2935

NTE2935 MOSFET N−Channel, Enhancement Mode High Speed Switch TO3PML Type Package Features: D Avalanche Rugged Technology D Rugged Gate Oxide Technology D Lower Input Capacitance D Improved Gate Charge D Extended Safe Operating Area D Lower RDS(on): 0.6383 Typ D Lower Leakage Current: 105 A (Max) @ VDS = 500V D G S Absolute Maximum Ratings: Drain−to−Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Drain Current, ID Continuous TC = +255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.2A TC = +1005C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.9A Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34A Total Power Dissipation (TC = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85W Derate Above 255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W/5C Gate−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +30V Single Pulsed Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 641mJ Avalanche Current (Note 1), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.2A Repetitive Avalanche Energy (Note 1), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.5mJ Peak Diode Recovery dv/dt (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5V/ns Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), TL . . . . . . . . . . . . . . +3005C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.465C/W Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 405C/W Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 2. L = 30mH, IAS = 6.2A, VDD = 50V, RG = 273 , Starting TJ = +255C. Rev. 10−13 Note 3. ISD 3 8A, di/dt 3 160A/5 s, VDD 3 V(BR)DSS, Starting TJ = +255C. Electrical Characteristics: (TC = +255C unless otherwise specified) Parameter Drain−Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Gate Threshold Voltage Symbol BVDSS Test Conditions VGS = 0V, ID = 2505 A +V(BR)DSS/ ID = 2505 A +TJ VGS(th) VDS = 5V, ID = 2505 A Min Typ Max Unit 500 − − V − 0.66 − V/5C 2.0 − 4.0 V Gate−Source Leakage Forward IGSS VGS = 30V − − 100 nA Gate−Source Leakage Reverse IGSS VGS = −30V − − −100 nA Drain−to−Source Leakage Current IDSS VDS = 500V − − 10 5A VDS = 400V, TC = +1255C − − 100 5A RDS(on) VGS = 10V, ID = 3.1A, Note 4 − − 0.85 3 Forward Transconductance gfs VDS = 50V, ID = 3.1A, Note 4 − 5.73 − mhos Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1MHz − 1190 1550 pF Output Capacitance Coss − 150 175 pF Reverse Transfer Capacitance Crss − 166 75 pF Turn−On Delay Time td(on) − 18 45 ns − 22 55 ns td(off) − 83 175 ns tf − 30 70 ns − 57 74 nC − 7.5 − nC − 28.4 − nC (Body Diode) − − 6.2 A Static Drain−Source ON Resistance Rise Time Turn−Off Delay Time Fall Time tr Total Gate Charge Qg Gate−Source Charge Qgs Gate−Drain (“Miller”) Charge Qgd VDD = 250V, ID = 8A, RG = 9.13 , Note 4, Note 5 VGS = 10V, ID = 8A, VDS = 400V, Note 4, Note 5 Source−Drain Diode Ratings and Characteristics Continuous Source Current IS Pulse Source Current ISM (Body Diode) Note 1 − − 34 A Diode Forward Voltage VSD TJ = +255C, IS = 6.2A, VGS = 0V, Note 4 − − 1.4 V Reverse Recovery Time trr − 370 − ns Reverse Recovery Charge Qrr TJ = +255C, IF = 8A, diF/dt = 100A/5 s, Note 4 − 3.9 − 5C Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 4. Pulse Test: Pulse Width = 2505 s, Duty Cycle 3 2%. Note 5. Essentially independent of operating temperature. .221 (5.6) .134 (3.4) Dia .123 (3.1) .630 (16.0) .315 (8.0) .866 (22.0) G D S .158 (4.0) .804 (20.4) .215 (5.45) .040 (1.0)