NTE2940 MOSFET N−Channel, Enhancement Mode High Speed Switch
Features: D Low Static Drain−Source ON Resistance D Improved Inductive Ruggedness D Fast Switching Times D Low Input Capacitance D Extended Safe Operating Area D TO220 Type Isolated Package Absolute Maximum Ratings: Drain−Source Voltage (Note 1), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Drain−Gate Voltage (RGS = 1MΩ, Note 1), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Gate−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V Drain Current, ID Continuous TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Pulsed (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60A Gate Current (Pulsed), IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±1.5A Single Pulsed Avalanche Energy (Note 3), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9.5mJ Avalanche Current, IAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.32W/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +175°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +175°C Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), TL . . . . . . . . . . . . . . +300°C Thermal Resistance: Maximum Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.12K/W Typical Case−to−Sink (Mounting surface flat, smooth, and greased), RthCS . . . . . . . 0.5K/W Maximum Junction−to−Ambient (Free Air Operation), RthJA . . . . . . . . . . . . . . . . . . . . 62.5K/W Note 1. TJ = +25° to +175°C. Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 3. L = 100µH, VDD = 25V, RG = 25Ω, Starting TJ = +25°C.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Drain−Source Breakdown Voltage Gate Threshold Voltage Gate−Source Leakage Forward Gate−Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain−Source ON Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Total Gate Charge (Gate−Source Plus Gate−Drain) Gate−Source Charge Gate−Drain (“Miller”) Charge Continuous Source Current Pulse Source Current Diode Forward Voltage Reverse Recovery Time Symbol BVDSS VGS(th) IGSS IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr (Body Diode) (Body Diode) Note 2 TJ = +25°C, IS = 15A, VGS = 0V, Note 4 TJ = +25°C, IF = 15A, dIF/dt = 100A/µs VGS = 10V, ID = 15A, VDS = 0.8 Max. Rating, Rating (Gate charge is essentially indepen independent of operating temperature) VDD = 0.5 BVDSS, ID = 15A, ZO = 24Ω, , (MOSFET switching times are essentially independent of operating temperature) Test Conditions VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VGS = 20V VGS = −20V VDS = Max. Rating, VGS = 0 VDS = 0.8 Max. Rating, TC = +150°C VGS = 10V, ID = 8A, Note 4 VDS ≥ 50V, ID = 8A, Note 4 VGS = 0V, VDS = 25V, f = 1MHz Min 60 2.0 − − − − − 5.6 − − − − − − − − − − − − − − Typ − − − − − − − − 635 218 105 − − − − − 6.3 12.3 − − − − Max − 4.0 100 −100 250 1000 0.10 − − − − 30 90 40 30 33 − − 1.5 60 1.5 310 Unit V V nA nA µA µA Ω mhos pF pF pF ns ns ns ns nC nC nC A A V ns
Source−Drain Diode Ratings and Characteristics
Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 4. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
.402 (10.2) Max .224 (5.7) Max .122 (3.1) Dia .295 (7.5) .669 (17.0) Max .165 (4.2)
.173 (4.4) Max .114 (2.9) Max
G
D
S
.531 (13.5) Min
.100 (2.54)
.059 (1.5) Max
