NTE2946

NTE2946 MOSFET N−Channel, Enhancement Mode High Speed Switch TO220 Full Pack Type Package Features: D Low Static Drain−Source ON Resistance D Improved Inductive Ruggedness D Fast Switching Times D Low Input Capacitance D Extended Safe Operating Area D Improved High Temperature Reliability D TO220 Type Isolated Package D G S Absolute Maximum Ratings: Drain−Source Voltage (Note 1), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Drain−Gate Voltage (RGS = 1M+ , Note 1), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Gate−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +20V Drain Current, ID Continuous TC = +255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.6A TC = +1005C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.2A Pulsed (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32A Gate Current (Pulsed), IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +1.5A Single Pulsed Avalanche Energy (Note 3), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 161mJ Avalanche Current, IAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.6A Total Power Dissipation (TC = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W Derate Above 255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.32W/5C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), TL . . . . . . . . . . . . . . +3005C Thermal Resistance: Maximum Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.12K/W Typical Case−to−Sink (Mounting surface flat, smooth, and greased), RthCS . . . . . . . 0.5K/W Maximum Junction−to−Ambient (Free Air Operation), RthJA . . . . . . . . . . . . . . . . . . . . 62.5K/W Note 1. TJ = +255 to +1505C. Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 3. L = 14mH, VDD = 50V, RG = 25+ , Starting TJ = +255C. Rev. 10−13 Electrical Characteristics: (TC = +255C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Drain−Source Breakdown Voltage BVDSS VGS = 0v, ID = 250.A 500 − − V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250.A 2.0 − 4.0 V Gate−Source Leakage Forward IGSS VGS = 20V − − 100 nA Gate−Source Leakage Reverse IGSS VGS = −20V − − −100 nA Zero Gate Voltage Drain Current IDSS VDS = Max. Rating, VGS = 0 − − 250 .A VDS = 0.8 Max. Rating, TC = +1255C − − 1000 .A RDS(on) VGS = 10V, ID = 4A, Note 4 − − 0.85 + Forward Transconductance gfs VDS . 50V, ID = 4A, Note 4 4.0 6.5 − mhos Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1MHz − 1510 − pF Output Capacitance Coss − 154 − pF Reverse Transfer Capacitance Crss − 66 − pF Turn−On Delay Time td(on) − 14 21 ns − 23 35 ns td(off) − 49 74 ns tf − 20 30 ns − − 74 nC − 9 − nC − 27 − nC (Body Diode) − − 8 A Static Drain−Source ON Resistance Rise Time Turn−Off Delay Time Fall Time tr Total Gate Charge (Gate−Source Plus Gate−Drain) Qg Gate−Source Charge Qgs Gate−Drain (“Miller”) Charge Qgd VDD = 0.5 BVDSS, ID = 8A, ZO = 9.1+ , (MOSFET switching times are essentially independent of operating temperature) VGS = 10V, ID = 8A, VDS = 0.8 Max. Rating, (Gate charge is essentially independent of operating temperature) Source−Drain Diode Ratings and Characteristics Continuous Source Current IS Pulse Source Current ISM (Body Diode) Note 2 − − 32 A Diode Forward Voltage VSD TJ = +255C, IS = 8A, VGS = 0V, Note 4 − − 2 V Reverse Recovery Time trr TJ = +255C, IF = 8A, dIF/dt = 100A/.s − 460 970 ns Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 4. Pulse Test: Pulse Width 3 300.s, Duty Cycle 3 2%. .402 (10.2) Max .224 (5.7) Max .122 (3.1) Dia .295 (7.5) .165 (4.2) .669 (17.0) Max G D S .531 (13.5) Min .100 (2.54) .059 (1.5) Max .173 (4.4) Max .114 (2.9) Max