NTE2960

NTE2960 MOSFET N−Channel, Enhancement Mode High Speed Switch TO−220 Full Pack Type Package D Applications: D SMPS D DC−DC Converter D Battery Charger D Power Supply of Printer D Copier D HDD, FDD, TV, VCR D Personal Computer G S Absolute Maximum Ratings: (TC = +25C unless otherwise specified) Drain−Source Voltage (VGS = 0V), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V Gate−Source Voltage (VDS = 0V), VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Drain Current, ID Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21A Maximum Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W Channel Temperature Range, Tch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Thermal Resistance, Channel−to−Case, Rth(ch−c) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.13C/W Isolation Voltage, VISO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2000V Electrical Characteristics: (Tch = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Drain−Source Breakdown Voltage V(BR)DSS VDS = 0V, ID = 1mA 900 − − V Gate−Source Breakdown Voltage V(BR)GSS VDS = 0V, IG = 100A 30 − − V Gate−Source Leakage IGSS VGS = 25V, VDS = 0V − − 10 A Zero Gate Voltage Drain Current IDSS VDS = 900V, VGS = 0 − − 1.0 mA Gate Threshold Voltage VGS(th) VDS = 10V, ID = 1mA 2.0 3.0 4.0 V Static Drain−Source ON Resistance RDS(on) VGS = 10V, ID = 3A − 1.54 2.00  Drain−Source On−State Voltage VDS(on) VGS = 10V, ID = 3A − 4.62 6.00 V |yfs| VGS = 10V, ID = 3A 4.2 7.0 − S Forward Transfer Admittance Rev. 10−13 Electrical Characteristics (Cont’d): (Tch = +25C unless otherwise specified) Parameter Symbol Test Conditions Typ Max Unit − 1380 − pF Input Capacitance Ciss Output Capacitance Coss − 140 − pF Reverse Transfer Capacitance Crss − 28 − pF Turn−On Delay Time td(on) − 25 − ns − 28 − ns td(off) − 185 − ns tf − 46 − ns − 1.0 1.5 V Rise Time tr Turn−Off Delay Time Fall Time Diode Forward Voltage .114 (2.9) VSD VGS = 0V, VDS = 25V, f = 1MHz Min VDD = 200V, ID = 3A, VGS = 10V, RGEN = RGS = 50 IS = 3A, VGS = 0V .181 (4.6) Max .126 (3.2) Dia Max .405 (10.3) Max Isol .252 (6.4) .622 (15.0) Max G D S .118 (3.0) Max .531 (13.5) Min .098 (2.5) .100 (2.54)