NTE2987

NTE2987 Logic Level MOSFET N−Channel, Enhancement Mode High Speed Switch TO220 Type Package Features: D Avalanche Rugged Technology D Logic Level Gate Drive D RDS(on) = 0.09 Typ. at VGS = 5V D +175C Operating Temperature D Fast Switching D Low Gate Charge D High Current Capability D G S Absolute Maximum Ratings: Drain Current, ID Continuous TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A TC = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14A Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80A Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.7W/C Gate−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V Avalanche Current, Repetitive or Non−Repetitive (Note 2), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Single Pulsed Avalanche Energy (Note 3), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120mJ Repetitive Avalanche Energy (Note 2), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mJ Avalanche Current, Repetitive or Non−Repetitive (Note 4), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . 14A Drain−Source Voltage (VGS = 0), VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Drain−Gate Voltage (RGS = 20k), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +175C Maximum Lead Temperature (During Soldering, 1.6mm from case, 10sec), TL . . . . . . . . . . +300C Thermal Resistance: Maximum Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.43C/W Typical Case−to−Sink (Mounting surface flat, smooth, and greased), RthCS . . . . . . 0.5C/W Maximum Junction−to−Ambient (Free Air Operation), RthJA . . . . . . . . . . . . . . . . . . . 62.5C/W Note Note Note Note 1. 2. 3. 4. Pulse width limited by safe operating area. Pulse width limited by TJ max, Duty Cycle < 1%. VDD = 25V, ID = IAR, Starting TJ = +175C. TC = +100C, Pulse width limited by TJ max, Duty Cycle < 1%. Rev. 10−13 Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Drain−Source Breakdown Voltage Drain−to−Source Leakage Current BVDSS VGS = 0v, ID = 250A 100 − − V IDSS VDS = 100V, VGS = 0 − − 1 A VDS = 80V, VGS = 0V, , TC = +150C − − 10 A Gate−Source Leakage Forward IGSS VGS = 15V − − 100 nA Gate−Source Leakage Reverse IGSS VGS = −15V − − −100 nA 1.0 1.6 2.5 V − 0.09 0.12  VDS > ID(on) x RDS(on)max, VGS = 10V 20 − − A 16 − mhos ON (Note 5) Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A Static Drain−Source ON Resistance RDS(on) VGS = 5V, ID = 10A On−State Drain Current ID(on) Dynamic Forward Transconductance gfs VDS > ID(on) x RDS(on)max, ID = 10A, Note 5 10 Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1MHz − 1200 1500 pF Output Capacitance Coss − 250 350 pF Reverse Transfer Capacitance Crss − 60 90 pF − 22 30 nC Switching Total Gate Charge Qg Gate−Source Charge Qgs − 6 − nC Gate−Drain (“Miller”) Charge Qgd − 12 − nC Turn−On Delay Time td(on) VDD = 30V, ID = 10A, RG = 50, VGS = 5V − 50 70 ns − 140 200 ns VDD = 80V, ID = 20A, RG = 50, VGS = 5V − 80 110 ns − 80 110 ns (Body Diode) − − 20 A Rise Time Turn−Off Delay Time Fall Time tr td(off) tf VGS = 5V, ID = 20A, VDD = 80V Source−Drain Diode Ratings and Characteristics Continuous Source Current IS Pulse Source Current ISM (Body Diode) Note 1 − − 80 A Diode Forward Voltage VSD ISD = 20A, VGS = 0V, Note 5 − − 1.5 V Reverse Recovery Time trr − 130 − ns Reverse Recovery Charge Qrr TJ = +150C, VDD = 50V, ISD = 20A, di/dt = 100A/s − 0.4 − C Reverse Recovery Current IRRM − 6 − A Note 1. Pulse width limited by safe operating area. Note 5. Pulse Test: Pulse Width = 300s, Duty Cycle = 1.5%. .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .070 (1.78) Max Gate .100 (2.54) .500 (12.7) Min Source Drain/Tab