NTE2991

NTE2991 MOSFET N−Channel, Enhancement Mode High Speed Switch TO220 Type Package Features: D Ultra Low On−Resistance D Dynamic dv/dt Rating D +175C Operating Temperature D Fast Switching D Fully Avalanche Rated D G S Absolute Maximum Ratings: Drain Current, ID Continuous (VGS = 10V) TC = +25C (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110A TC = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80A Pulsed (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 390A Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3W/C Gate−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Single Pulsed Avalanche Energy (IAS = 62A, L = 138H, Note 3), EAS . . . . . . . . . . . . . . . . . . 264mJ Avalanche Current (Note 2), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62A Repetitive Avalanche Energy (Note 2), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mJ Peak Diode Recovery dv/dt (Note 4), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0V/ns Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +175C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +175C Maximum Lead Temperature (During Soldering, 1.6mm from case, 10sec), TL . . . . . . . . . . +300C Maximum Thermal Resistance: Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.75C/W Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62C/W Typical Thermal Resistance, Case−to−Sink (Flat, greased surface), RthCS . . . . . . . . . . . . 0.50C/W Note 1. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 3. This is a calculated value limited to TJ = +175C. Note 4. ISD  62A, di/dt  207A/s, VDD  V(BR)DSS, TJ  +175C. Rev. 5−19 Electrical Characteristics: (TJ = +25C unless otherwise specified) Parameter Drain−Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Symbol BVDSS Test Conditions VGS = 0V, ID = 250A V(BR)DSS/ Reference to +25C, ID = 1mA TJ Min Typ Max Unit 55 − − V − 0.057 − V/C − − 8.0 m Static Drain−Source ON Resistance RDS(on) VGS = 10V, ID = 62A, Note 5 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 2.0 − 4.0 V VDS = 25V, ID = 62A, Note 5 44 − − mhos VDS = 55V, VGS = 0 − − 25 A VDS = 44V, VGS = 0V, TC = +150C − − 250 A Forward Transconductance Drain−to−Source Leakage Current gfs IDSS Gate−Source Leakage Forward IGSS VGS = 20V − − 100 nA Gate−Source Leakage Reverse IGSS VGS = −20V − − −100 nA VGS = 10V, ID = 62A, VDS = 44V − − 146 nC Total Gate Charge Qg Gate−Source Charge Qgs − − 35 nC Gate−Drain (“Miller”) Charge Qgd − − 54 nC Turn−On Delay Time td(on) − 14 − ns − 101 − ns td(off) − 50 − ns tf − 65 − ns Between lead, 6mm (0.25”) from package and center of die contact − 4.5 − nH − 7.5 − nH VGS = 0V, VDS = 25V, f = 1MHz − 3247 − pF Rise Time Turn−Off Delay Time Fall Time tr Internal Drain Inductance LD Internal Source Inductance LS VDD = 28V, ID = 62A, RG = 4.5, VGS = 10V, Note 5 Input Capacitance Ciss Output Capacitance Coss − 781 − pF Reverse Transfer Capacitance Crss − 211 − pF (Body Diode) − − 110 A Source−Drain Diode Ratings and Characteristics Continuous Source Current IS Pulse Source Current ISM (Body Diode) Note 2 − − 390 A Diode Forward Voltage VSD TJ = +25C, IS = 62A, VGS = 0V, Note 5 − − 1.3 V Reverse Recovery Time trr − 69 104 ns Reverse Recovery Charge Qrr TJ = +25C, IF = 62A, di/dt = 100A/s, Note 5 − 143 215 C Forward Turn−On Time ton Intrinsic turn−on time is neglegible (turn−on is dominated by LS + LD) Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 5. Pulse Width  400s, Duty Cycle  2%. .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Gate .100 (2.54) Source Drain/Tab