NTE2992

NTE2992 MOSFET N - Channel, Enhancement Mode High Speed Switch Features: D 4V Gate Drive D Low Drain - Source On - Resistance D High Forward Transfer Admittance D Low Leakage Current Applications: D Switching Regulators D UPS D DC - DC Converters D General Purpose Power Amplifier Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Drain - Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Drain - Gate Voltage (RGS = 20kΩ), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Gate - Source Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V Drain Current, ID Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24A Maximum Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 55° to +150°C Thermal Resistance, Junction - to - Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5°C/W Thermal Resistance, Junction - to - Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.77°C/W Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Drain- Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate- Source Leakage Current Drain- Source On - State Resistance Forward Transfer Admittance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol Test Conditions Min 600 1.5 3 Typ 0.95 4 1400 75 250 Max 3.5 300 ±100 1.25 2000 120 380 Unit V V µA nA Ω S pF pF pF V(BR)DSS ID = 10mA, VGS = 0V VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss ID = 1mA, VDS = 10V VDS = 600V, VGS = 0V VGS = ±25V, VDS = 0V ID = 3A, VGS = 10V ID = 3A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified) Parameter Turn - On Time Rise Time Turn - Off Time Fall Time Total Gate Charge Gate- Source Charge Gate- Drain (“Miller”) Charge Symbol td(on) tr td(off) tf Qg Qgs Qgd IDR IDRP VDSF trr Qrr IDR = 6A, VGS = 0V IDR = 6A, VGS = 0V, dIDR/dt = 100A/µs VDD = 400V, VGS = 10V, ID = 6A Test Conditions VDD = 300V, ID = 3A, VGS = 10V, RL = 100Ω Min Typ 40 25 85 20 56 32 24 Max 80 50 170 40 110 Unit ns ns ns ns nC nC nC Source- Drain Diode Ratings and Characteristics: (TA = +25°C unless otherwise specified) Continuous Drain Reverse Current Pulse Drain Reverse Current Diode Forward Voltage Reverse Recovery Time Reverse Recovered Charge 460 3.5 6 24 -2 A A V ns µC .114 (2.9) .181 (4.6) .126 (3.2) Dia Max Max .405 (10.3) Max .252 (6.4) Isol .622 (15.0) Max G D S .118 (3.0) Max .531 (13.5) Min .098 (2.5) .100 (2.54)