NTE2993

Features: D Repetitive Avalanche Ratings D Dynamic dv/dt Rating D Simple Drive Requirements D Ease of Paralleling NTE2993 MOSFET N−Channel, Enhancement Mode High Speed Switch Absolute Maximum Ratings: Drain−Source Voltage (VGS = 0V, ID = 1mA), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Gate−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V Continuous Drain Current (VGS = 10V), ID TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14A TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9A Pulsed Drain Current (Note 1), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56A Maximum Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2W/°C Single Pulse Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.3mJ Avalanche Current (Note 1), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14A Repetitive Avalanche Energy (Note 1), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15mJ Peak Diode Recovery (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0V/ns Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +150°C Lead temperature (During Soldering, .063” (1.6mm) from case, 10sec max), TL . . . . . . . . . +300°C Thermal Resistance, Junction−to−Ambient (Typical Socket Mount), RthJA . . . . . . . . . . . . . . . 30K/W Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.83K/W Note 1. Repetitive Rating; Pulse width limited by maximum junction temperature. Note 2. VDD = 50V, Starting TJ = +150°C, Peak IL = 14A. Note 3. ISD ≤ 14A, di/dt ≤ 145A/µs, VDD ≤ 400V, TJ ≤ +150°C. Electrical Characteristics: (TJ = +25°C unless otherwise specified) Parameter Drain−Source Breakdown Voltage Temperature Coefficient of Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current On−State Drain Current Gate−Source Leakage Forward Gate−Source Leakage Reverse Drain−Source On−State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn−On Time Rise Time Turn−Off Time Fall Time Total Gate Charge Gate−Source Charge Gate−Drain (“Miller”) Charge Internal Drain Inductance Symbol Test Conditions Min 400 − 2.0 − − 15 − − − 6.0 − − − VDD = 200V, ID = 14A, RG = 2.35Ω − − − − VGS = 10V, ID = 14A, VDS = 200V 52 5.0 25 Measured between the contact screw on header that is closer to source and gate pins and center of die. − Typ − 0.46 − − − − − − − − 2600 680 250 − − − − − − − 6.1 Max − − 4.0 25 250 − 100 −100 0.3 0.4 − − − − 35 190 170 130 110 18 65 − Unit V V/°C V µA µA A nA nA Ω Ω S pF pF pF ns ns ns ns nC nC nC nH V(BR)DSS ID = 1mA, VGS = 0V ∆V(BR)DSS Reference to +25°C, ID = 1mA ∆TJ VGS(th) VDS = VGS, ID = 250µA IDSS ID(on) IGSS IGSS RDS(on) () gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd LS + LD VDS = 320 VGS = 0V, TJ = 125°C VDS > ID(on) x RDS(on) max, VGS = 10V VGS = 20V VGS = −20V VGS = 10V, ID = 9A , Note 4 VGS = 10V, ID = 14A, Note 4 ID = 3A, VDS = 10V, Note 4 VGS = 0V, VDS = 25V, f = 1.0 MHz Source−Drain Diode Ratings and Characteristics: Continuous Source Current Pulse Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovered Charge Forward Turn−on Time IS ISM VSD trr QRR ton Note 1 TJ = +25°C, IS = 14A, VGS = 0V, Note 4 TJ = +25°C, IF = 14A, dl/dt ≤100A/µs, VDD ≤ 50V Note 4 0V, − − − − − − − − − − 14 56 1.7 1200 250 A A V ns µc Intrinsic turn−on time is negligible. Turn−on speed is substantially controlled by LS + LD. Note 1. Repetitive Rating; Pulse width limited by maximum junction temperature. Note 4. Pulse width ≤ 300µs, Duty Cycle 2%. .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min Source .215 (5.45) .040 (1.02) 1.187 (30.16) .665 (16.9) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max .525 (13.35) R Max Gate Drain