NTE2996

NTE2996 MOSFET N−Channel, Enhancement Mode High Speed Switch Features: D Ultra Low On−Resistance D Dynamic dv/dt Rating D +175°C Operating Temperature D Fast Switching D Fully Avalanche Rated Absolute Maximum Ratings: Drain Current, ID Continuous (VGS = 10V) TC = +25°C (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 84A TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59A Pulsed (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 330A Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.4W/°C Gate−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V Single Pulsed Avalanche Energy (IAS = 50A, L = 260µH, Note 3), EAS . . . . . . . . . . . . . . . . . 320mJ Avalanche Current (Note 2), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A Repetitive Avalanche Energy (Note 2), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17mJ Peak Diode Recovery dv/dt (Note 4), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0V/ns Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +175°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +175°C Maximum Lead Temperature (During Soldering, 1.6mm from case, 10sec), TL . . . . . . . . . . +300°C Maximum Thermal Resistance: Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.75°C/W Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62°C/W Typical Thermal Resistance, Case−to−Sink (Flat, greased surface), RthCS . . . . . . . . . . . . 0.50°C/W Note 1. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 3. This is a calculated value limited to TJ = +175°C. Note 4. ISD ≤ 50A, di/dt ≤ 230A/µs, VDD ≤ V(BR)DSS, TJ ≤ +175°C. Electrical Characteristics: (TJ = +25°C unless otherwise specified) Parameter Drain−Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Static Drain−Source ON Resistance Gate Threshold Voltage Forward Transconductance Drain−to−Source Leakage Current Gate−Source Leakage, Forward Gate−Source Leakage, Reverse Total Gate Charge Gate−Source Charge Gate−Drain (“Miller”) Charge Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Continuous Source Current Pulse Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn−On Time Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss IS ISM VSD trr Qrr ton (Body Diode) Note 6 (Body Diode) Note 2 TJ = +25°C, IS = 50A, VGS = 0V, Note 5 TJ = +25°C, IF = 50A, di/dt = 100A/µs, Note 5 Between lead, 6mm (0.25”) from package and center of die contact VGS = 0V, VDS = 25V, f = 1MHz VDD = 30V, ID = 50A, RG = 3.6Ω, VGS = 10V Note 5 10V, Symbol BVDSS Test Conditions VGS = 0V, ID = 250µA Min 60 Typ − 0.064 − − − − − − − − − − 12 78 48 53 4.5 7.5 3210 690 140 − − − 73 220 Max − Unit V ∆V(BR)DSS/ Reference to +25°C, ID = 1mA ∆TJ RDS(on) VGS(th) gfs IDSS IGSS VGS = 10V, ID = 50A, Note 5 VDS = VGS, ID = 250µA VDS = 25V, ID = 50A, Note 5 VDS = 60V, VGS = 0 VDS = 48V, VGS = 0V, TC = +150°C VGS = 20V VGS = −20V VGS = 10V, ID = 50A, VDS = 48V − − 2.0 69 − − − − − − − − − − − − − − − − − − − − − − 12 4.0 − 25 250 100 −100 130 28 44 − − − − − − − − − 84 330 1.3 110 330 V/°C Ω V mhos µA µA nA nA nC nC nC ns ns ns ns nH nH pF pF pF A A V ns µC Source−Drain Diode Ratings and Characteristics Intrinsic turn−on time is neglegible (turn−on is dominated by LS + LD) Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 5. Pulse Width ≤ 400µs, Duty Cycle ≤ 2%. Note 6. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Gate .100 (2.54) Source Drain/Tab