NTE308P

NTE308P Integrated Thyristor/Rectifier (ITR) TV Horizontal Deflection & Commutating Switch Absolute Maximum Ratings: Repetitive Peak Forward Off–State Voltage (TC = +85°C, Note 1), VDRM . . . . . . . . . . . . . . . . . . 750V Repetitive Peak Reverse Voltage (TC = +85°C, Note 1), VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . 700V Mean On–State Current (TC = +60°C, 50Hz Sine Wave, Conduction Angle of 180°), IO, IT(AV) Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0A SCR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0A RMS On–State Current (TC = +60°C, 50Hz Sine Wave, Conduction Angle of 180°), IF(RMS), IT(RMS) Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5A SCR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.0A Surge Current (TC = +85°C, One Full Cycle), ITSM, IFSM 60Hz Sinusoidal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80A 50Hz Sinusoidal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70A Rate of Change of On–State Current (VD = 700V, IGT = 50mA, tr = 0.1µs), di/dt . . . . . . . . . 200A/µs Peak Forward Gate Power (Negative Gate Bias = –10V, 10µs max, Note 2), PGM . . . . . . . . . . 25W Peak Reverse Gate Power (Negative Gate Bias = –10V, 10µs max, Note 2), PRGM . . . . . . . . 25W Operating Case Temperature Range, TC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +85°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C Maximum Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5°C/W Lead Temperature (During Soldering, 1/8” from case, 10sec max), TL . . . . . . . . . . . . . . . . . . +225°C Note 1. These values do not apply if there is a positive gate signal. Gate must be open or negatively biased. Note 2. Any product of gate current and gate voltage which results in a gate power less than the maximum is permitted, provided that the maximum reverse gate bias (as specified) is not exceeded. Electrical Characteristics: (TC = +25°C “Maximum Ratings” unless otherwise specified) Parameter Peak Forward Blocking Current Instantaneuos Voltage Rectifier SCR Gate Trigger Current, Continuous DC Gate Trigger Voltage, Continuous DC Symbol IDRM VF VT IGT VGT Test Conditions VD = 700V, TC = +85°C IF = 10A IT = 30A Anode Voltage = 12V, RL = 30Ω Anode Voltage = 12V, RL = 30Ω Min – – – – – Typ 0.5 1.35 1.75 15 1.8 Max Unit 1.5 2.0 3.0 45 4.0 mA V V mA V Electrical Characteristics (Cont’d): (TC = +25°C “Maximum Ratings” unless otherwise specified) Parameter Rate of Rise of Off–State Voltage Reverse Recovery Time (Rectifier Only) Circuit Commutated Turn–Off Time Symbol dv/dt trr tq Test Conditions VD = 700V, VG = –2.5V, TC = +85°C IFM = 10A, –diF/dt = –10A/µs, tp = 3µs Minimum Negative Gate Bias = –2.5V, dv/dt = 400V/µs, TC = +80°C, Note 3 Min 1000 0.5 – Typ – 0.7 – Max Unit – – 4.2 V/µs µs µs Note 3. Turn–off time increases with temperature; therefore, case temperature must not exceed the level indicated. .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Gate .100 (2.54) Cathode Anode/Tab