NTE327

NTE327 Silicon NPN Transistor Power Amp, Switch Description: The NTE327 is a silicon NPN transistor in a TO3 type package designed for use in industrial amplifier and switching circuit applications. Features: D High Collector–Emitter Sustaining Voltage D High DC Current Gain D Low Collector–Emitter Saturation Voltage D Fast Switching Times Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180V Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.14W/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Maximum Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . 0.875°C/W Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 150 – – V VCE = 150V, VEB(off) = 1.5V – – 10 mA VCE = 150V, VEB(off) = 1.5V, TC = +150°C – – 1.0 mA ICEO VCE = 75V, IB = 0 – – 50 µA ICBO VCB = 180V, IE = 0 – – 50 µA IEBO VBE = 6V, IC = 0 – – 100 µA OFF Characteristics Collector–Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current VCEO(sus) IC = 50mA, IB = 0, Note 1 ICEX Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit VCE = 2V, IC = 0.5A 50 – – VCE = 2V, IC = 10A 30 – 120 VCE = 2V, IC = 25A 12 – – IC = 10A, IB = 1.0A – – 1.0 V IC = 25A, IB = 2.5A – – 1.8 V IC = 10A, IB = 1.0A – – 1.8 V IC = 25A, IB = 2.5A – – 2.5 V IC = 10A, VCE = 2V – – 1.8 V VCE = 10V, IC = 1A, f = 10MHz, Note 2 40 – – MHz Cob VCB = 10V, IE = 0, f = 0.1MHz – – 300 pF Rise Time tr VCC = 80V, IC = 10A, IB1 = 1A, VBE(off) = 6V – – 0.3 µ Storage Time ts VCC = 80V, IC = 10A, IB1 = IB2 =1A – – 1.0 µs Fall Time tf – – 0.25 µs ON Characteristics (Note 1) DC Current Gain hFE Collector–Emitter Saturation Voltage VCE(sat) Base–Emitter Saturation Voltage VBE(sat) Base–Emitter ON Voltage VBE(on) Dynamic Characteristics Current Gain–Bandwidth Product fT Output Capacitance Switching Characteristics Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. Note 2. fT = |hfe| • ftest. .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min .040 (1.02) 1.187 (30.16) Emitter .215 (5.45) .665 (16.9) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max Base .525 (13.35) R Max Collector/Case