NTE3300

NTE3300 Insulated Gate Bipolar Transistor N−Channel Enhancement Mode, High Speed Switch TO220 Full Pack Features: D High Input Impedance D Low Saturation Voltage D Enhancement Mode D 20V Gate Drive Applications: D High Power Switching D Motor Control Absolute Maximum Ratings: (TA = +25_C unless otherwise specified) Collector−Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Gate−Emitter Voltage, VGES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . $25V Collector Current, IC DC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Pulse (1ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130A Collector Power Dissipation, PC TA = +25_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W TC = +25_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150_C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55_ to +150_C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.16_C/W Screw Torque . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6Nwm Electrical Characteristics: (TA = +25_C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Gate Leakage Current IGES VGE = $25V, VCE = 0 − − $100 nA Collector Cutoff Current ICES VCE = 400V, VGE = 0 − − 1.0 mA 400 − − V 4.0 5.0 7.0 V Collector−Emitter Breakdown Voltage V(BR)CES IC = 2mA, VGE = 0 Gate−Emitter Cutoff Voltage VGE(off) IC = 1mA, VCE = 5V Collector−Emitter Saturation Voltage VCE(sat) IC = 130A, VGE = 20V (Pulsed) − 5.0 8.0 V Cies VCE = 10V, VGE = 0, f = 1MHz − 1350 − pF VCC = 300V − 0.1 0.5 ms ton − 0.15 0.50 ms tf − 4.0 6.0 ms toff − 4.5 7.0 ms Input Capacitance Rise Time Turn−On Time Fall Time Turn−Off Time tr Rev. 8−14 C G E .402 (10.2) Max .173 (4.4) Max .224 (5.7) Max .122 (3.1) Dia .114 (2.9) Max .295 (7.5) .165 (4.2) .669 (17.0) Max G C E .531 (13.5) Min .100 (2.54) .059 (1.5) Max NOTE: Tab is isolated