NTE3320

NTE3320 Insulated Gate Bipolar Transistor N−Channel Enhancement Mode, High Speed Switch TO3P Type Package Features: D Fourth Generation IGBT D Enhancement Mode Type D High Speed D Low Switching Loss D Low Saturation Voltage Applications: D High Power Switching Absolute Maximum Ratings: (TA = +25_C unless otherwise specified) Collector−Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Gate−Emitter Voltage, VGES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +20V Collector Current, IC DC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A Pulse (1ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100A Collector Power Dissipation (TC = +25_C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150_C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55_ to +150_C Thermal Resistance, Junction−to−Case, Rth(j−c) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.521_C/W Screw Torque . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8Nwm Electrical Characteristics: (TA = +25_C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Gate Leakage Current IGES VGE = $20V, VCE = 0 − − $500 nA Collector Cutoff Current ICES VCE = 600V, VGE = 0 − − 1.0 mA Gate−Emitter Cutoff Voltage VGE(off) IC = 5 mA, VCE = 5V 3.5 − 6.5 V Collector−Emitter Saturation Voltage VCE(sat) IC = 50A, VGE = 15V − 2.0 2.45 V VCE = 10V, VGE = 0, f = 1MHz − 7900 − pF Inductive Load − 0.09 − ms VCC = 300V, IC = 50 A, VGG = 15V, RG = 13 W − 0.07 − ms − 0.24 − ms td (off) − 0.30 − ms tf − 0.05 − ms Turn−Off Time toff − 0.43 − ms Turn−On Switching Loss Eon − 1.30 − mJ Turn−Off Switching Loss Eoff − 1.34 − mJ Input Capacitance Turn−On Delay Time Rise Time Turn−On Time Turn−Off Delay Time Fall Time Cies td (on) tr ton Rev. 8−14 C G E .810(20.57) Max .204 (5.2) .236 (6.0) 1.030 (26.16) .137 (3.5) Dia Max .098 (2.5) .215 (5.45) .787 (20.0) .040 (1.0) G C E Note: Collector connected to heat sink. .023 (0.6)