NTE3322

NTE3322 Insulated Gate Bipolar Transistor N−Channel Enhancement Mode, High Speed Switch TO3P Type Package Features: D Enhancement Mode Type D FRD Included Between Emitter and Collector D High Speed D Low Saturation Voltage Applications: D High Power Switching Absolute Maximum Ratings: (TA = +25_C unless otherwise specified) Collector−Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V Gate−Emitter Voltage, VGES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +25V Collector Current, IC DC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60A Pulse (1ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120A Emitter−Collector Foward Current, IEC DC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Pulse (1ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120A Collector Power Dissipation (TC = +25_C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 170W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150_C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55_ to +150_C Thermal Resistance, Junction−to−Case, RthJC IGBT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.74_C/W Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0_C/W Screw Torque . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8Nwm Electrical Characteristics: (TA = +25_C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Gate Leakage Current IGES VGE = $25V, VCE = 0 − − $500 nA Collector Cutoff Current ICES VCE = 900V, VGE = 0 − − 1.0 mA Gate−Emitter Cutoff Voltage VGE(off) IC = 60mA, VCE = 5V 3.0 − 6.0 V Collector−Emitter Saturation Voltage VCE(sat) IC = 10A, VGE = 15V − 1.6 2.2 V IC = 60A, VGE = 15V − 2.1 2.7 V Rev. 8−14 Electrical Characteristics (Cont’d): (TA = +25_C unless otherwise specified) Parameter Symbol Input Capacitance Min Typ Max Unit VCE = 10V, VGE = 0, f = 1MHz − 3800 − pF VCC = 600V − 0.35 0.60 ms ton − 0.46 0.75 ms tf − 0.25 0.40 ms toff − 0.60 0.70 ms IEC = 15A, VGE = 0 − 1.5 2.0 V IF = 15A, VGE = 0, di/dt = −20A/ms − 0.7 2.5 ms Cies Rise Time tr Turn−On Time Fall Time Turn−Off Time Emitter−Collector Forward Voltage Reverse Recovery Time VECF trr Test Conditions C G E .810(20.57) Max .204 (5.2) .236 (6.0) 1.030 (26.16) .137 (3.5) Dia Max .098 (2.5) .215 (5.45) .787 (20.0) .040 (1.0) G C E Note: Collector connected to heat sink. .023 (0.6)