NTE332MCP

NTE331 (NPN) & NTE332 (PNP) Silicon Complementary Transistors Audio Power Amp, Switch Description: The NTE331 (NPN) and NTE332 (PNP) are silicon epitaxial–base complementary power transistors in a TO–220 plastic package intended for use in power linear and switching applications. Absolute Maximum Ratings: Collector–Base Voltage (IE = 0), VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector–Emitter Voltage (IB = 0), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Emitter–Base Voltage (IC = 0), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Emitter Current, IE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Total Power Dissipation (TC ≤ +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Thermal Resistance Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.4°C/W Max Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Collector Cutoff Current Symbol ICBO Test Conditions Min Typ Max Unit IE = 0, VCB = 100V – – 500 µA IE = 0, VCB = 100V, TC = +150°C – – 5 mA Collector Cutoff Current ICEO IB = 0, VCE = 50V – – 1 mA Emitter Cutoff Current IEBO IC = 0, VEB = 5V – – 1 mA VCEO(sus) IB = 0, IC = 100mA, Note 1 100 – – V IC = 5A, IB = 0.5A, Note 1 – – 1 V IC = 10A, IB = 2.5A, Note 1 – – 3 V Collector–Emitter Sustaining Voltage Collector–Emitter Saturation Voltage VCE(sat) Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified) Parameter Symbol Base–Emitter Saturation Voltage Test Conditions Min Typ Max Unit VBE(sat) IC = 10A, IB = 2.5A, Note 1 – – 2.5 V Base–Emitter Voltage VBE IC = 5A, VCE = 4V, Note 1 – – 1.5 V DC Current Gain hFE IC = 0.5A, VCE = 4V, Note 1 40 – 250 IC = 5A, VCE = 4V, Note 1 15 – 150 IC = 10A, VCE = 4V, Note 1 5 – – IC = 0.5A, VCE = 4V 3 – – Transistion Frequency fT Note 1. Pulsed; Pulse Duration = 300µs, Duty Cycle = 1.5%. .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Base .100 (2.54) Emitter Collector/Tab MHz