NTE336

NTE335 & NTE336 Silicon NPN Transistor RF Power Output Description: The NTE335 and NTE336 are silicon NPN RF power transistors designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30MHz. Features: D Specified 12.5V, 30MHz Characteristics: Output Power = 80W Minimum Gain = 12dB Efficiency = 50% D Available in Two Different Package Designs: NTE335 (W52N, Flange Mount) NTE336 (T93D, Stud Mount) Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250W Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.43W/°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +150°C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.7°C/W Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter OFF Characteristics Collector−Emitter Breakdown Voltage Emitter−Base Breakdown Voltage V(BR)CEO IC = 100mA, IB = 0 V(BR)CES IC = 50mA, VBE = 0 V(BR)EBO IE = 10mA, IC = 0 18 36 4 − − − − − − V V V Symbol Test Conditions Min Typ Max Unit Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified) Parameter ON Characteristics DC Current Gain Dynamic Characteristics Output Capacitance Functional Tests Common−Emitter Amplifier Power Gain Collector Efficiency Series Equivalent Input Impedance Series Equivalent Output Impedance Parallel Equivalent Input Impedance Parallel Equivalent Output Impedance Gpe η Zin Zout − − VCC = 12.5V, POUT = 80W 80W, f = 30MHz 30MHz 12 50 − − − − − − .938 − j.341 1.16 − j.201 1.06Ω 1817pF 1.19Ω 777pF − − − − − − dB % Ω Ω Cob VCB = 15V, IE = 0, f = 1MHz − − 250 pF hFE IC = 5A, VCE = 5V 10 − 150 Symbol Test Conditions Min Typ Max Unit NTE335 NTE336 .725 (18.42) E .250 (6.35) B .225 (5.72) E C .127 (3.17) Dia (2 Holes) 1.040 (26.4) Max .520 (13.2) C .230 (5.84) 1.061 (25.95) E E B Ceramic Cap .385 (9.8) Dia .480 (12.1) Dia .100 (2.54) .005 (0.15) .260 (6.6) .168 (4.27) .065 (1.68) .975 (24.77) .095 (2.42) 8−32−NC−3A Wrench Flat .750 (19.05)