NTE341

NTE341 Silicon NPN Transistor RF Power Output Description: The NTE341 is a epitaxial silicon NPN transistor designed primarily for VHF mobile communications. The chip of this transistor is mounted so as to isolate the collector lead and ground the emitter lead for high gain performance. Features: D 175MHz D 12.5 Volts D POUT = 4W Minimum D GP = 12dB D Grounded Emitter Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V Collector−Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 640mA Total Device Dissipation, Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8W Operating Junction Temperature, Tj . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200°C Storage Temperatures Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +200°C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21.9°C/W Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter OFF Characteristics Collector−Emitter Breakdown Voltage Emitter−Base Breakdown Voltage Collector Cutoff Current ON Characteristics DC Current Gain Dynamic Characteristics Output Power Common−Emitter Amplifier Power Gain Output Capacitance POUT GPE Cob VCE = 12.5V, f = 175MHz VCE = 12.5V, f = 175MHz VCE = 15V, f = 1MHz 4 12 − − − 180 − − 230 W dB pF hFE VCE = 5V, IC = 50mA 10 − 100 V(BR)CEO IC = 10mA, IB = 0 V(BR)CES IC = 5mA, VBE = 0 V(BR)EBO IC = 0, IE = 1mA ICBO VCB = 15V, IE = 0 18 36 4 − − − − − − − − 250 V V V µA Symbol Test Conditions Min Typ Max Unit Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified) Parameter Impedance Data Input Impedance Zin PIN= 200mW, VCC = 12 6V 12.6V f = 136MHz f = 155MHz f = 175MHz Clamping Impedance Zcl f = 136MHz f = 155MHz f = 175MHz 3.0 − j3.8 4.0 − j2.0 4.3 − j5.8 12.8 − j11 11 − j14.8 13 − j20 Symbol Test Conditions Min Typ Max Unit .370 (9.39) Dia Max .355 (9.03) Dia Max .260 (6.6) Max .500 (12.7) Min .018 (0.45) Dia Base Collector Emitter/Case 45° .031 (.793)