NTE347

NTE347 Silicon NPN Transistor RF Power Output PO = 3W @ 175MHz Description: The NTE347 is designed for 13.6 volt, VHF large signal power amplifier applications required in military and industrial equipment operating to 240MHz. Features: D Low lead inductance stripline package for easier design and increased broadband capability. D Balanced Emitter Construction for increased Safe Operating Area. The NTE347 is designed to withstand an Open or Shorted Load at rated Output Power. D Specified 13.6 volt, 175MHz Characteristics− Output Power = 3.0 Watts Minimum Gain = 8.2dB Efficiency = 50% Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V Emitter−Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6A Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 86mW/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +200°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +200°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage Collector−Emitter Breakdown Voltage Emitter−Base Breakdown Voltage Collector Cutoff Current ON CHARACTERISTICS DC Current Gain DYNAMIC CHARACTERISTICS Output Capacitance Cob VCB = 15V, IE = 0, f = 0.1 to 1.0 MHz − 15 30 pF hFE IC = 100mA, VCE = 5.0Vdc 5.0 − − − V(BR)CEO V(BR)CES V(BR)CBO V(BR)CBO IC = 200mA, IB = 0 IC = 200mA, IB = 0 IE = 1.0mA, IC = 0 VCB = 15V, IE = 0 18 36 4.0 − − − − − − − − 1.0 V V V mA Symbol Test Conditions Min Typ Max Unit Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter FUNCTIONAL TEST Power Input Common−Emitter Amplifier Power Gain Collector Efficiency Pin GPE η POUT = 3W, VCE = 13.6V, f = 175MHz − 8.2 50 0.35 0.45 − − − − W dB % Symbol Test Conditions Min Typ Max Unit 1.065 (27.08) Max .530 (13.46) C .220 (5.58) E .030 (.762) B .305 (7.75) E .090 (2.28) .375 (9.52) Dia .260 (6.60) .005 (0.15) .325 (8.28) Dia 8−32 NC−3A Wrench Flat .075 (1.94) .115 (2.92) .730 (18.54)