NTE379

NTE379 Silicon NPN Transistor Power Amp, High Voltage, Switch Description: The NTE379 is a silicon NPN transistor in a TO220 type package designed for high–voltage, high– speed power switching inductive circuits where fall time is critical. This device is particularly suited for 115 and 220V switch–mode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers, and Deflection circuits. Features: D VCEO(sus) = 400V D Reverse Bias SOA with Inductive Loads @ TC = +100°C D 700V Blocking Capability Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Collector–Emitter Voltage, VCEV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24A Base Current, IB Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Emitter Current, IE Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36A Total Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16mW/°C Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mW/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Thermal Resistance, Junction to Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.25°C/W Thermal Resistance, Junction to Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5°C/W Lead Temperature (During Soldering, 1/8” from case for 5sec), TL . . . . . . . . . . . . . . . . . . . . . +275°C Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle ≤ 10%. Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 400 – – V VCEV = 700V, VBE(off) = 1.5V – – 1 mA VCEV = 700V, VBE(off) = 1.5V, TC = +100°C – – 5 mA IEBO VEB = 9V, IC = 0 – – 1 mA hFE IC = 5A, VCE = 5V 8 – 40 IC = 8A, VCE = 5V 6 – 30 IC = 5A, IB = 1A – – 1.0 V IC = 8A, IB = 1.6A – – 1.5 V IC = 12A, IB = 3A – – 3.0 V IC = 8A, IB = 1.6A, TC = +100°C – – 2.0 V IC = 5A, IB = 1A – – 1.2 V IC = 8A, IB = 1.6A – – 1.6 V IC = 8A, IB = 1.6A, TC = +100°C – – 1.5 V IC = 500mA, VCE = 10V, f = 1MHz 4 – – MHz VCB = 10V, IE = 0, f = 0.1MHz – 180 – pF – 0.06 0.1 µs – 0.45 1.0 µs – 1.3 3.0 µs – 0.2 0.7 µs – 0.92 2.3 µs – 0.12 0.7 µs OFF Characteristics (Note 2) Collector–Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current VCEO(sus) IC = 10mA, IB = 0 ICEV ON Characteristics (Note 2) DC Current Gain Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage VCE(sat) VBE(sat) Dynamic Characteristics Current Gain–Bandwidth Product Output Capacitance fT Cob Switching Characteristics Resistive Load Delay Time td Rise Time tr Storage Tme ts Fall Time tf VCC = 125V, IC = 8A, IB1 = IB2 = 1.6A, tp = 25µs, µ Duty Cycle ≤ 1% Inductive Load, Clamped Voltage Storage Time tsv Crossover Time tc IC = 8A, Vclamp = 300V, IB1 = 1.6A, VBE(off) = 5V, TC = +100°C Note 2. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%. .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Base .100 (2.54) Emitter Collector/Tab