NTE393

NTE392 (NPN) & NTE393 (PNP) Silicon Complementary Transistors General Purpose TO−3PN Type Package Description: The NTE392 (NPN) and NTE393 (PNP) are silicon complementary transistors in a TO−3PN type package designed for general purpose power amplifier and switching applications. Features: D 25A Collector Current D Low Leakage Current: ICEO = 1mA @ VCE = 60V D Excellent DC Gain: hFE = 40 Typ @ 15A D High Current Gain Bandwidth Product: hfe = 3 Min @ IC = 1A, f = 1MHz Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Emitter−Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C Unclamped Inductive Load, ESB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90mJ Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0C/W Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35.7C/W Note 1. Pulse Test: Pulse Width = 10ms, Duty Cycle  10%. Rev. 2−15 Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 100 − − V OFF Characteristics Collector−Emitter Sustaining Voltage VCEO(sus) IC = 30mA, IB = 0, Note 2 Collector−Emitter Cutoff Current Emitter−Base Cutoff Current ICEO VCE = 60V, IB = 0 − − 1 mA ICES VCE = 100V, VEB = 0 − − 0.7 mA IEBO VEB = 5V, IC = 0 − − 1 mA hFE IC = 1.5A, VCE = 4V 25 − − IC = 15A, VCE = 4V 15 − 75 IC = 15A, IB = 1.5A − − 1.8 V IC = 25A, IB = 5A − − 4 V IC = 15A, VCE = 4V − − 2.0 V IC = 25A, VCE = 4V − − 4.0 V ON Characteristics (Note 2) DC Current Gain Collector−Emitter Saturation Voltage Base−Emitter ON Voltage VCE(sat) VBE(on) Dynamic Characteristics Small−Signal Current Gain hfe IC = 1A, VCE = 10V, f = 1kHz 25 − − Current−Gain Bandwidth Product fT IC = 1A, VCE = 10V, f = 1MHz, Note 3 3 − − Note 2. Pulse Test: Pulse Width = 300s, Duty Cycle  2%. Note 3. fT = |hfe|  ftest .189 (4.8) .787 (20.0) .614 (15.6)E .590 (15.0) .138 (3.5) Dia .889 (22.6) B .215 (5.45) C E MHz