NTE4016B & NTE4016BT
Integrated Circuit
CMOS, Quad Analog Switch/Quad Multiplexer
Description:
The NTE4016B (14−Lead DIP) and NTE4016BT (SOIC−14) quad bilateral switches are constructed
with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure.
Each device consists of four independent switches capable of controlling either digital or analog signals. The quad bilateral switch is used in signal gating, chopper, modulator demodulator and CMOS
logic implementation.
Features:
Diode Protection on All Inputs
Supply Voltage Range = 3.0 Vdc to 18Vdc
Linearized Transfer Characteristics
Low Noise − 12nV/√Cycle, f ≥ 1.0kHz typical
This Device Has Inputs and Outputs Which Do Not Have ESD Protection. Antistatic Precautions
Must Be Taken.
D
D
D
D
D
Absolute Maximum Ratings: (Voltages referenced to VSS, Note 1)
DC Supply Voltage, VDD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.5 to +18.0V
Input Voltage (DC or Transient), Vin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.5 to VDD to +0.5V
Output Voltage (DC or Transient), Vout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.5 to VDD to +0.5V
Input Current (DC or Transient, Per Pin), Iin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±10mA
Switch Through Current, ISW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±25mA
Power Dissipation (Per Package), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Temperature Derating (from +65° to +125°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −7.0mW/°C
Ambient Temperature Range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +150°C
Lead Temperature (During Soldering, 8sec max), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +260°C
Note 1. Maximum Ratings are those values beyond which damage to the device may occur.
Electrical Characteristics: (Voltages referenced to VSS, Note 2, Note 3)
−555C
+255C
+1255C
VDD
Vdc
5.0
Min
Max
Min
Typ
Max
Min
Max
−
−
−
1.5
0.9
−
−
Unit
Vdc
10
−
−
−
1.5
0.9
−
−
Vdc
15
−
−
−
1.5
0.9
−
−
Vdc
5.0
−
−
3.0
2.0
−
−
−
Vdc
10
−
−
8.0
6.0
−
−
−
Vdc
15
−
−
13.0
11.0
−
−
−
Vdc
15
−
±0.1
−
±0.00001
±0.1
−
±0.1
μAdc
−
−
−
−
5.0
−
−
−
pF
Switch Input
−
−
−
−
5.0
−
−
−
pF
Switch Output
−
−
−
−
5.0
−
−
−
pF
Feed Through
−
−
−
−
0.2
−
−
−
pF
5.0
−
0.25
−
0.0005
0.25
−
7.5
μAdc
10
−
0.5
−
0.0010
0.5
−
15
μAdc
15
−
1.0
−
0.0015
1.0
−
30
μAdc
5.0
−
600
−
300
660
−
840
Ohms
(Vin = −5.0Vdc) VSS = −5.0Vdc
5.0
−
600
−
300
660
−
840
Ohms
(Vin = ±5.0Vdc)
5.0
−
600
−
280
660
−
840
Ohms
(Vin = +7.5Vdc)
7.5
−
360
−
240
400
−
520
Ohms
(Vin = −7.5Vdc) VSS = −7.5Vdc
7.5
−
360
−
240
400
−
520
Ohms
(Vin = ±0.25Vdc)
7.5
−
360
−
180
400
−
520
Ohms
(Vin = +10Vdc)
10
−
600
−
260
660
−
840
Ohms
(Vin = +0.25Vdc) VSS = 0Vdc
10
−
600
−
310
660
−
840
Ohms
(Vin = +5.6Vdc)
10
−
600
−
310
660
−
840
Ohms
(Vin = +15Vdc)
15
−
360
−
260
400
−
520
Ohms
(Vin = +0.25Vdc) VSS = 0Vdc
15
−
360
−
260
400
−
520
Ohms
(Vin = +9.3Vdc)
15
−
360
−
300
400
−
520
Ohms
5.0
−
−
−
15
−
−
−
Ohms
7.5
−
−
−
10
−
−
−
Ohms
7.5
−
±0.1
−
±0.0015
±0.1
−
±0.1
μAdc
7.5
−
±0.1
−
±0.0015
±0.1
−
±0.1
μAdc
Parameter
Input Voltage
Symbol
VIL
VIH
Input Control Current
Iin
Input Capacitance
Control
Cin
Quiescent Current
(Per Package, Note 4)
“ON” Resistance
(VC = VDD, RL = 10kΩ)
(Vin = +5.0Vdc)
Δ“ON” Resistance
Between any 2 circuits in a
common package (VC = VDD)
(Vin = ±5.0Vdc, VSS = −5.0Vdc)
IDD
RON
ΔRON
(Vin = ±7.5.Vdc, VSS = −7.5Vdc)
Input/Output Leakage Current
(VC = VSS)
(Vin = +7.5Vdc, Vout = −7.5Vdc)
(Vin = −7.5Vdc, Vout = +7.5Vdc)
−
Note 2. All unused inputs must be returned to VDD or VSS.
Note 3. Data labeled “Typ” is not to be used for design purposes but is intended as an indication of
the device’s potential performance.
Note 4. For voltage drops across the switch (ΔVswitch) > 600mV ( > 300mV at high temperature),
excessive VDD current may be drawn; i.e., the current out of th switch may contain both
VDD and switch input components. The reliability of the device will be unaffected unless
the Maximum Ratings are exceeded (See first page of this data sheet.).
Electrical Characteristics: (CL = 50pF, TA = +25°C, Note 3, Note 5)
Parameter
Symbol
VDD
Vdc
Min
Typ
Max
Unit
5.0
−
15
45
ns
10
−
7.0
15
ns
15
−
6.0
12
ns
Propagation Delay Time (VSS = 0Vdc)
Vin to Vout
(VC = VDD, RL = 10kΩ)
tPLH.
tPHL
Control to Output
Vin ≤ 10Vdc, RL = 10kΩ)
tPHZ.
TPLZ,
tPZH,
tPZL
5.0
−
34
90
ns
10
−
20
45
ns
15
−
15
35
ns
−
5.0
−
30
−
mV
10
−
50
15
−
100
−
mV
5.0
−
−80
−
dB
5.0
−
24
−
nV/pCycle
10
−
25
15
−
30
−
nV/pCycle
5.0
−
12
−
nV/pCycle
10
−
12
15
−
15
−
nV/pCycle
−
0.16
−
%
(RL = 1.0kΩ)
−
2.3
−
dB
(RL = 10kΩ)
−
0.2
−
dB
(RL = 100kΩ)
−
0.1
−
dB
(RL = 1.0MΩ)
−
0.05
−
dB
(RL = 1.0kΩ)
−
54
−
MHz
(RL = 10kΩ)
−
40
−
MHz
(RL = 100kΩ)
−
38
−
MHz
(RL = 1.0MΩ)
−
37
−
MHz
Crosstalk, Control to Output (VSS = 0Vdc)
(VC = VDD, Rin = 10kΩ, Rout = 10kΩ, f = 1.0kHz)
Crosstalk Between any Two Switches (VSS = 0Vdc)
(RL = 1.0kΩ, f = 1.0kHz,
Crosstalk = 20log10
−
Vout1
Vout2
Noise Voltage (VSS = 0Vdc)
(VC = VDD, f = 100Hz)
(VC = VDD, f = 100kHz)
Second Harmonic Distortion (VSS = −5.0Vdc)
(Vin = 1.77Vdc, RMS Centered Q 0.0Vdc,
RL = 10kΩ, f = 1.0kHz)
−
5.0
Insertion Loss (VC = VDD, Vin = 1.77Vdc, VSS = −5.0Vdc,
(RMS centered = 0.0Vdc, f = 1.0Mhz)
−
5.0
Iloss = 20log10
mV
nV/pCycle
nV/pCycle
Vout1
Vout2
Bandwidth (−3.0dB)
(VC = VDD, Vin = 1.77Vdc, VSS = −5.0Vdc,
(RMS centered = 0.0Vdc)
−
5.0
Note 3. Data labeled “Typ” is not to be used for design purposes but is intended as an indication of
the device’s potential performance.
Note 5. The formulas given are for the typical characteristics only at +25°C.
Electrical Characteristics (Cont’d): (CL = 50pF, TA = +25°C, Note 3, Note 5)
Parameter
Symbol
VDD
Vdc
−
5.0
Min
Typ
Max
Unit
(RL = 1.0kΩ)
−
1250
−
kHz
(RL = 10kΩ)
−
140
−
kHz
(RL = 100kΩ)
−
18
−
kHz
(RL = 1.0MΩ)
−
2.0
−
kHz
OFF Channel Feedthrough Attenuation (VSS = −5.0Vdc)
(VC = VSS, 20log10
Vout1
Vout2
= −50dB)
Note 3. Data labeled “Typ” is not to be used for design purposes but is intended as an indication of
the device’s potential performance.
Note 5. The formulas given are for the typical characteristics only at +25°C.
Pin Connection Diagram
Block Diagram
Control 1
14 VDD
In 1 1
In 1
13 Control 1
12 Cont D
Out 1 2
Out 2 3
In 2 4
11 In/Out D
Control 2 5
10 Out/In D
Control 3 6
9 Out/In C
VSS 7
8 In/Out C
Control 2
In 2
Control 3
In 3
Control 4
In 4
13
2
1
Out 1
5
3
4
Out 2
6
9
8
Out 3
12
10
11
Out 4
VDD = Pin14
VSS = Pin7
Control
0 = VSS
1 = VDD
Pin Connection Diagram
(1/4 of Device Shown)
Out
Control
Logic Diagram Restrictions
VSS ≤ Vin ≤ VDD
VSS ≤ Vout ≤ VDD
In
Switch
Off
On
NTE4016B
14
8
1
7
.300
(7.62)
.600 (15.24)
.200 (5.08)
Max
.100 (2.45)
.099 (2.5) Min
.785 (19.95)
Max
NTE4016BT
.340 (8.64)
.050 (1.27)
14
8
1
7
.198
(5.03)
.154
(3.91)
.236
(5.99)
016 (.406)
061
(1.53)
.006 (.152)
NOTE: Pin1 on Beveled Edge