NTE46

NTE46 Silicon NPN Transistor Darlington, General Purpose Amplifier, Preamp, Driver Absolute Maximum Ratings: Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/°C Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mW/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Thermal Resistance, Junction to Case, RΘJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3°C/W Thermal Resistance, Junction to Ambient, RΘJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200°C/W Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector–Emitter Breakdown V(BR)CES IC = 100µA, VBE = 0 Voltage Collector–Base Breakdown Voltage V(BR)CBO IC = 100µA, IE = 0 100 – – V 100 – – V Emitter–Base Breakdown Voltage 12 – – V OFF Characteristics Collector Cutoff Voltage Emitter Cutoff Current V(BR)EBO IE = 10µA, IC = 0 ICBO VCB = 80V, IE = 0 – – 100 nA ICES VCE = 80V, VBE = 0 – – 500 nA IEBO VBE = 10V, IC = 0 – – 100 nA Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit IC = 10mA, VCE = 5V 10,000 – – IC = 100mA, VCE = 5V 10,000 – – IC = 10mA, IB = 0.01mA – 0.7 1.2 V IC = 100mA, IB = 0.1mA – 0.8 1.5 V IC = 100mA, VCE = 5V – 1.4 2.0 V 125 200 – MHz – 5.0 8.0 pF ON Characteristics (Note 1) DC Current Gain hFE Collector–Emitter Saturation Voltage Base–Emitter ON Voltage VCE(sat) VBE(on) Small–Signal Characteristics Current Gain–Bandwidth Product Output Capacitance fT Cobo IC = 10mA, VCE = 5V, f = 100MHz, Note 2 VCB = 10V, IE = 0, f = 100kHz Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2% Note 2. fT = hfe  ftest .135 (3.45) Min .210 (5.33) Max Seating Plane C B E .500 (12.7) Min .021 (.445) Dia Max E B C .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max