NTE461

NTE461 Silicon N−Channel JFET Transistor Dual, Matched Pair DC Amp/Sampler/Chopper Features: D High Input Impedance: IG < 50pA D Minimum System Error and Calibrations D TO−71 Case Style Absolute Maximum Ratings: Gate Drain or Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −50V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA Device Dissipation (TA = +25°C, Each Side) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67mW/°C Total Device Dissipation (TA = +25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.67mW/°C Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +200°C Lead Temperature (During Soldering, 1/16” from case for 30sec) . . . . . . . . . . . . . . . . . . . . . . +300°C Electrical Characteristics: (TA = +25°C, unless otherwise specified) Parameter Static Characteristics Gate−Source Breakdown Voltage Gate Reverse Current Gate−Source Cutoff Voltage Saturation Drain Current Gate Operating Current Dynamic Characteristics Forward Transcondutance Input Capacitance Reverse Transfer Capacitance gfs Ciss Crss g = 1kHz VDS = 15V, VGS = 0 VDS = 15V, VGS = 0 1500 − − − − − 6000 µmhos 6 2 pF pF V(BR)GSS IGSS VGS(off) IDSS IG IG = −1µA, VDS = 0 VGS = −30V, VDS = 0 VDG = 15V, ID = 0.5nA VDS = 15V, VGS = 0 VDG = 15V, ID = 200µA −50 − −0.5 0.5 − − − − − − − −100 −4.5 8.0 −50 V pA V mA pA Symbol Test Conditions Min Typ Max Unit Electrical Characteristics (Cont’d): (TA = +25°C, unless otherwise specified) Parameter Matching Characteristics Differential Gate Current Saturation Drain Current Ratio Differential Gate−Source Voltage Gate−Source Voltage Differential Drift Differential Drift Transconductance Ratio Differential Output Conductance gfs1/gfs2 gos1−gos2 IG1−IG2 VDG = 15V, ID = 200µA, TA = +25°C ID = 50µA ID = 200µA VDG = 15V, TA = +25°C/TB = +125°C ID = 200µA, TA = −55°C/TB = +25°C Note 2 − 0.95 − − − − 0.95 − − − − − − − − − 5 1.0 15 15 40 40 1.0 3 µmhos mV mV µV/°C µV/°C nA IDSS1/IDSS2 VDS = 15V, VGS = 0, Note 1 VGS1−VGS2 VGD = 15V Symbol Test Conditions Min Typ Max Unit Note 1. Assumes smaller value in numerator. Note 2. Measured at end points, TA and TB. .230 (5.84) Dia Max .195 (4.95) Dia Max .190 (4.82) .500 (12.7) Min .018 (0.45) Dia .100 (2.54) Dia .050 (1.27) 2 1 45° 6 7 .038 (0.96) .041 (1.04) Pin 1 Pin 2 Pin 3 Pin 5 Pin 6 Pin 7 S1 D1 G1 S2 D2 G2 3 5 Pin4 and Pin8 are Omitted All Leads are Isolated from Case