NTE464

NTE464 (P−Ch) & NTE465 (N−Ch) Silicon Complementary MOSFET Transistors Enhancement Mode for Switching Applications TO72 Type Package Absolute Maximum Ratings: Drain−Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Drain−Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Gate−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +30V Gate Current, IG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA Total Device Dissipation (TA = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Derate Above 255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.7mW/5C Total Device Dissipation (TC = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mW Derate Above 255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.56mW/5C Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +1755C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1755C Electrical Characteristics: (TA = +255C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit −25 − − V VDS = −10V, VGS = 0, TA = +255C − − −10 nA VDS = −10V, VGS = 0, TA = +1505C − − −10 5A VGS = +30V, VDS = 0 − − +10 pA OFF Characteristics Drain−Source Breakdown Voltage Zero−Gate−Voltage Drain Current Gate Reverse Current V(BR)DSX ID = −105 A, VGS = 0 IDSS IGSS ON Characteristics Gate Threshold Voltage VGS(Th) VDS = −10V, ID = −105 A −1 − −5 V Drain−Source On−Voltage VDS(on) ID = −2mA, VGS = −10V − − −1 V ID(on) VGS = −10V, VDS = −10V −3 − − mA On−State Drain Current Rev. 10−13 Electrical Characteristics (Cont’d): (TA = +255C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit − − 600 + − − 300 + 1000 − − 5 mhos Small−Signal Characteristics Drain−Source Resistance NTE464 rds(on) VGS = −10V, ID = 0, f = 1kHz NTE465 Forward Transfer Admittance |yfs| VDS = −10V, ID = 2mA, f = 1kHz Input Capacitance Ciss VDS = −10V, VGS = 0, f = 140kHz − − 5 pF Reverse Transfer Capacitance Crss VDS = 0, VGS = 0, f = 140kHz − − 1.3 pF Drain−Substrate Capacitance NTE464 Cd(sub) VD(SUB) = −10V, f = 140kHz − − 4 pF − − 5 pF − − 45 ns tr − − 65 ns td2 − − 60 ns tf − − 100 ns NTE465 Switching Characteristics Turn−On Delay td1 Rise Time Turn−Off Delay Fall Time ID = −2mA, VDS = −10V, VGS = −10V NTE464 .220 (5.58) Dia .185 (4.7) Dia D Case G S .190 (4.82) .030 (.762) .500 (12.7) Min NTE465 .018 (0.45) Dia D Case G Gate Source Drain S 455 Case .040 (1.02)